ZXTP2025FTA Diodes Incorporated

ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V > -50V (BR)CEO I = -5A C(cont) R = 30m typical CE(sat) V < - 60mV -1A CE(sat) P = 1.2W D Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features Higher power dissipation SOT23 package High peak current Low saturation voltage High gain 50V forward blocking voltage Applications MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive Pinout - top view High side switches DC-DC converters Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTP2025FTA 7 8 3,000 Device marking 312 Issue 3 - January 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTP2025F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -7.0 V EBO Peak pulse current I -10 A CM (c) I -5 A C Continuous collector current Base current I -1.2 A B (a) P 1.0 W Power dissipation T =25C D A 8.0 mW/C Linear derating factor (b) P 1.2 W D Power dissipation T =25C A 9.6 mW/C Linear derating factor (c) P 1.56 W Power dissipation T =25C D A 12.5 mW/C Linear derating factor Operating and storage temperature T :T -55 to +150 C j stg Thermal resistance Parameter Symbol Value Unit (a) R 125 C/W Junction to ambient JA (b) R 104 C/W Junction to ambient JA (c) R 80 C/W Junction to ambient JA NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) As (b) above measured at t<5secs. Issue 3 - January 2006 2 www.zetex.com Zetex Semiconductors plc 2006