X-On Electronics has gained recognition as a prominent supplier of ZXTP2027FTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP2027FTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP2027FTA Diodes Incorporated

ZXTP2027FTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXTP2027FTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT PNP 60V Transistor
Datasheet: ZXTP2027FTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7682 ea
Line Total: USD 0.77 
Availability - 73539
Ship by Tue. 27 Aug to Thu. 29 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5330
Ship by Wed. 21 Aug to Tue. 27 Aug
MOQ : 315
Multiples : 1
315 : USD 0.4579
500 : USD 0.4112
1000 : USD 0.3706
3000 : USD 0.3501

2699
Ship by Wed. 28 Aug to Mon. 02 Sep
MOQ : 1
Multiples : 1
1 : USD 0.5917
10 : USD 0.479
30 : USD 0.4217
100 : USD 0.3665
500 : USD 0.3342
1000 : USD 0.3168

73539
Ship by Tue. 27 Aug to Thu. 29 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7682
10 : USD 0.6796
100 : USD 0.475
500 : USD 0.4071
1000 : USD 0.3565
3000 : USD 0.3289
6000 : USD 0.3139
9000 : USD 0.3139
24000 : USD 0.3047

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the ZXTP2027FTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP2027FTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V > -100V, V > -60V (BR)CEV (BR)CEO I = -4A C(cont) R = 31 m typical CE(sat) V < -60 mV -1A CE(sat) P = 1.2W D Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features Higher power dissipation SOT23 package High peak current E Low saturation voltage 100V forward blocking voltage E Applications MOSFET and IGBT gate driving C Motor drive B Relay, lamp and solenoid drive High side switches Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) ZXTP2027FTA 7 8mm 3,000 Device marking 951 Issue 3 - May 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTP2027F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -100 V CBO Collector-emitter voltage V -100 V (BR)CEV Collector-emitter voltage V -60 V CEO Emitter-base voltage V -7 V EBO Peak pulse current I -10 A CM (b) I -4 A Continuous collector current C Base current I -1 A B o (a) P 1.0 W Power dissipation T =25 C D A o 8.0 mW/ C Linear derating factor o (b) P 1.2 W Power dissipation T =25 C D A o mW/ C 9.6 Linear derating factor o (c) P 1.56 W Power dissipation T =25 C D A o 12.5 mW/ C Linear derating factor o Operating and storage temperature T :T -55 to +150 j stg C Thermal resistance Parameter Symbol Value Unit (a) o R 125 Junction to ambient JA C/W (b) o R 104 Junction to ambient JA C/W (c) o R 80 Junction to ambient JA C/W NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) As (b) above measured at t<5secs. Issue 3 - May 2007 2 www.zetex.com Zetex Semiconductors plc 2007

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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