X-On Electronics has gained recognition as a prominent supplier of ZXTP23015CFHTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP23015CFHTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP23015CFHTA Diodes Incorporated

ZXTP23015CFHTA electronic component of Diodes Incorporated
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Part No.ZXTP23015CFHTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 15 V 5 A 270MHz 1.25 W Surface Mount SOT-23-3
Datasheet: ZXTP23015CFHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7436 ea
Line Total: USD 0.74 
Availability - 5994
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3436
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8293
10 : USD 0.6628
30 : USD 0.5795
100 : USD 0.5173
500 : USD 0.4674
1000 : USD 0.4423

5994
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7436
10 : USD 0.5907
100 : USD 0.4257
500 : USD 0.3498
1000 : USD 0.3289
3000 : USD 0.2882

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
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We are delighted to provide the ZXTP23015CFHTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP23015CFHTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V > -15V, V > -15V (BR)CES (BR)CEO V > -6V (BR)ECO I = -6A C(CONT) R = 20m typical CE(SAT) V < -36mV -1A CE(SAT) P = 1.25W D Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Feature Higher power dissipation SOT23 package E High peak current Low saturation voltage 15V forward blocking voltage 6V reverse blocking voltage Applications E High side disconnect switches DC - DC converters C MOSFET and IGBT gate driving B Motor drive Relay, lamp, and solenoid drive Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) ZXTP23015CFHTA 7 8mm 3000 Device marking 317 Issue 2 - May 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTP23015CFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -15 V CBO Collector-emitter voltage V -15 V (BR)CES Collector-emitter voltage V -15 V CEO Emitter-base voltage V -7.0 V EBO Emitter-collector voltage V -6.0 V ECO Peak pulse current I -10 A CM (c) I -5 A Continuous collector current C (d) I -6 A Continuous collector current C Base current I -1.2 A B o (a) P 0.73 W Power dissipation T =25 C D A o 5.84 mW/ C (a) Linear derating factor o (b) P 1.05 W D Power dissipation T =25 C A o 8.4 (b) mW/ C Linear derating factor o (c) P 1.25 W Power dissipation T =25 C D A o 9.6 (c) mW/ C Linear derating factor o (d) P 1.81 W Power dissipation T =25 C D A o 14.5 (d) mW/ C Linear derating factor o Operating and storage temperature T :T -55 to j stg C +150 Thermal resistance Parameter Symbol Value Unit (a) o R 171 Junction to ambient JA C/W (b) o R 119 Junction to ambient JA C/W (c) o R 100 Junction to ambient JA C/W (d) o R 69 Junction to ambient JA C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 2 - May 2007 2 www.zetex.com Zetex Semiconductors plc 2007

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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