X-On Electronics has gained recognition as a prominent supplier of ZXTP23140BFHTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP23140BFHTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP23140BFHTA Diodes Incorporated

ZXTP23140BFHTA electronic component of Diodes Incorporated
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Part No.ZXTP23140BFHTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 140 V 2.5 A 130MHz 1.25 W Surface Mount SOT-23-3
Datasheet: ZXTP23140BFHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9108 ea
Line Total: USD 0.91 
Availability - 8696
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7482
10 : USD 0.7328
30 : USD 0.7214
100 : USD 0.7099

8696
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9108
10 : USD 0.6094
100 : USD 0.44
500 : USD 0.3894
1000 : USD 0.3597
3000 : USD 0.3212
6000 : USD 0.3003
9000 : USD 0.2882

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTP23140BFHTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP23140BFHTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP23140BFH 140V SOT23 PNP medium power transistor Summary V > -160V, V > -140V (BR)CEX (BR)CEO I = -2.5A C(CONT) R = 76m typical CE(sat) V < -95mV -1A CE(sat) P = 1.25W D Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features E Higher power dissipation SOT23 package High peak current Low saturation voltage 160V forward blocking voltage Applications E DC - DC converters Motor drive C High side switches B Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) ZXTP23140BFHTA 7 8mm 3,000 Device marking 955 Issue 1 - February 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTP23140BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -160 V CBO Collector-emitter voltage V -160 V (BR)CEX Collector-emitter voltage V -140 V CEO Emitter-base voltage V -7.0 V EBO Peak pulse current I -5 A CM (b) I -2.5 A Continuous collector current C Base current I -1 A B (a) P 0.73 W Power dissipation T =25C D A (a) 5.84 mW/C Linear derating factor (b) P 1.05 W Power dissipation T =25C D A (b) 8.4 mW/C linear derating factor (c) P 1.25 W Power dissipation T =25C D A (c) 9.6 mW/C linear derating factor (d) P 1.81 W Power dissipation T =25C D A (d) 14.5 mW/C linear derating factor Operating and storage temperature T :T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 171 C/W Junction to ambient JA (b) R 119 C/W Junction to ambient JA (c) R 100 C/W Junction to ambient JA (d) R 69 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5sec. Issue 1 - February 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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