X-On Electronics has gained recognition as a prominent supplier of ZXTP25020DZTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP25020DZTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP25020DZTA Diodes Incorporated

ZXTP25020DZTA electronic component of Diodes Incorporated
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Part No.ZXTP25020DZTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT PNP 20V HIGH GAIN
Datasheet: ZXTP25020DZTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.638 ea
Line Total: USD 0.64 
Availability - 10132
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
937
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4906
10 : USD 0.4332
30 : USD 0.4084
100 : USD 0.3779
500 : USD 0.3493
1000 : USD 0.3417

10132
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.638
10 : USD 0.484
100 : USD 0.3311
500 : USD 0.2607
1000 : USD 0.1782

59170
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.2112

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTP25020DZTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP25020DZTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BV > -20V CEO BV > -4V ECO I = 5A C(cont) V < -65mV -1A CE(sat) R = 39m CE(sat) P = 2.4W D Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management B functions Features High peak current E Low saturation voltage High gain SOT89 package Applications E DC-DC converters Load switch C C Motor drive Disconnect switch B MOSFET and IGBT gate drive Pinout - top view Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXTP25020DZTA 7 12 1000 Device marking 1L5 Issue 1- December 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTP25020DZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage V -25 V CBO Collector-Emitter voltage V -20 V CEO Emitter-Base voltage (reverse blocking) V -4 V ECO Emitter-Base voltage V -7 V EBO (c) I -5 A Continuous Collector current C Base current I -1 A B Peak pulse current I -10 A CM (a) P 1.1 W Power dissipation at T =25C D A 8.8 mW/C Linear derating factor (b) P 1.8 W Power dissipation at T =25C D A 14.4 mW/C Linear derating factor (c) P 2.4 W Power dissipation at T =25C D A 19.2 mW/C Linear derating factor (d) P 4.46 W Power dissipation at T =25C D A 35.7 mW/C Linear derating factor (e) P 15.7 W Power dissipation at T =25C D C 126 mW/C Linear derating factor Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 117 C/W Junction to ambient JA (b) R 68 C/W Junction to ambient JA (c) R 51 C/W Junction to ambient JA (d) R 28 C/W Junction to ambient JA (e) R 7.95 C/W Junction to case JC NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical. Issue 1- December 2007 2 www.zetex.com Zetex Semiconductors plc 2007

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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