X-On Electronics has gained recognition as a prominent supplier of ZXTP25040DFHTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP25040DFHTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP25040DFHTA Diodes Incorporated

ZXTP25040DFHTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXTP25040DFHTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 40 V 3 A 270MHz 1.25 W Surface Mount SOT-23-3
Datasheet: ZXTP25040DFHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.46 ea
Line Total: USD 0.46

Availability - 79031
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1769
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 437
Multiples : 1
437 : USD 0.2972
500 : USD 0.2795
1000 : USD 0.2617

2769
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6194
10 : USD 0.495
30 : USD 0.433
100 : USD 0.3864
500 : USD 0.349
1000 : USD 0.3305

79031
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.46
10 : USD 0.3979
100 : USD 0.2748
500 : USD 0.2311
1000 : USD 0.2162
3000 : USD 0.215

14550
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.24

1769
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 423
Multiples : 1
423 : USD 0.2972

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the ZXTP25040DFHTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP25040DFHTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BV > -40V CEO BV > -3V ECO I = -3A C(CONT) R = 55 m CE(sat) V < -85mV 1A CE(sat) P = 1.25W D Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features E High power dissipation SOT23 package High peak current Low saturation voltage 3V reverse blocking voltage Applications E MOSFET and IGBT gate driving DC - DC converters C Motor drive B High side driver Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) ZXTP25040DFHTA 7 8mm 3000 Device marking 024 Issue 5 - March 2008 1 www.zetex.com Zetex Semiconductors plc 2008ZXTP25040DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -45 V CBO Collector-emitter voltage (forward blocking) V -40 V CEO Emitter-collector voltage (reverse blocking) V -3 V ECO Emitter-base voltage V -7 V EBO (b) I -3 A C Continuous collector current Peak pulse current I -9 A CM (a) P 0.73 W Power dissipation at T =25C D A 5.84 mW/C linear derating factor (b) P 1.05 W D Power dissipation at T =25C A 8.4 mW/C linear derating factor (c) P 1.25 W Power dissipation at T =25C D A 9.6 mW/C linear derating factor (d) P 1.81 W D Power dissipation at T =25C A 14.5 mW/C linear derating factor Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 171 C/W Junction to ambient JA (b) R 119 C/W Junction to ambient JA (c) R 100 C/W JA Junction to ambient (d) R 69 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5sec. Issue 5 - March 2008 2 www.zetex.com Zetex Semiconductors plc 2008

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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