X-On Electronics has gained recognition as a prominent supplier of ZXTP25100BFH Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP25100BFH Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP25100BFH Diodes Incorporated

ZXTP25100BFH electronic component of Diodes Incorporated
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Part No.ZXTP25100BFH
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Discrete Semiconductor Products Transistors (BJT) - Single - TRANSISTOR PNP 100V 2A SOT23-3
Datasheet: ZXTP25100BFH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.4768 ea
Line Total: USD 47.68 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 100
Multiples : 1
100 : USD 0.4768
500 : USD 0.3835
1000 : USD 0.3586

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Gain Hfe Max
Current Ic Continuous A Max
Current Ic Hfe
Current Ic Hfe -Do Not Use See Id 1182
Dc Current Gain Hfe Max
Dc Current Gain Hfe Min
Gain Bandwidth Ft Typ
Hfe Min
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Smd Marking
Termination Type
Voltage Vcbo
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTP25100BFH from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP25100BFH and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV > -140V, BV > -100V (BR)CEX (BR)CEO BV > -7V (BR)ECX I = -2A C(cont) V < -130mV -1A CE(sat) R = 108m typical CE(sat) P = 1.25W D Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features High power dissipation SOT23 package E High peak current Low saturation voltage 140V forward blocking voltaget 7V reverse blocking voltage Applications MOSFET and IGBT gate driving DC - DC converters Pinout - top view Motor drive Relay, lamp, and solenoid drive Ordering information Device Reel size Tape width Quantity per reel (inches) ZXTP25100BFHTA 7 8mm 3,000 Device marking 056 Issue 1 - March 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTP25100BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -140 V CBO Collector-emitter voltage (forward blocking) V -140 V CEX Collector-emitter voltage V -100 V CEO Emitter-collector voltage (reverse blocking) V -7 V ECX Emitter-base voltage V -7 V EBO (b) I -2 A Continuous collector current C Peak pulse current I -5 A CM (a) P 0.73 W Power dissipation at T =25C D A 5.84 mW/C Linear derating factor (b) P 1.05 W Power dissipation at T =25C D A 8.4 mW/C Linear derating factor (c) P 1.25 W Power dissipation at T =25C D A 9.6 mW/C Linear derating factor (d) P 1.81 W Power dissipation at T =25C D A 14.5 mW/C Linear derating factor Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 171 C/W Junction to ambient JA (b) R 119 C/W Junction to ambient JA (c) R 100 C/W Junction to ambient JA (d) R 69 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - March 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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