X-On Electronics has gained recognition as a prominent supplier of ZXTP25140BFHTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP25140BFHTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP25140BFHTA Diodes Incorporated

ZXTP25140BFHTA electronic component of Diodes Incorporated
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Part No.ZXTP25140BFHTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 140 V 1 A 75MHz 1.25 W Surface Mount SOT-23-3
Datasheet: ZXTP25140BFHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.803 ea
Line Total: USD 0.8 
Availability - 5652
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5652
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.803
10 : USD 0.5401
100 : USD 0.3696
500 : USD 0.2926
1000 : USD 0.2673
3000 : USD 0.2178
6000 : USD 0.2057

8730
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2609
6000 : USD 0.2474
9000 : USD 0.2427
15000 : USD 0.2402

838080
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2437

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the ZXTP25140BFHTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP25140BFHTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV > -180V BV > -140V (BR)CEX (BR)CEO BV > -7V (BR)ECO I = -1A C(cont) R = 180 m typical ce(sat) V < -260mV 1A ce(sat) P = 1.25W D Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features E High power dissipation SOT23 package 180V forward blocking voltage Low saturation voltage Applications DC-DC converters High side switching Ordering information Pinout - top view Device Reel size Tape width Quantity per (inches) reel ZXTP25140BFHTA 7 8mm 3,000 Device marking 026 Issue 1 - March 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTP25140BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -180 V CBO Collector-emitter voltage (forward blocking) V -180 V CEX Collector-emitter voltage V -140 V CEO Emitter-collector voltage (reverse blocking) V -7 V ECO Emitter-base voltage V -7 V EBO (a) I -1 A Continuous collector current C Peak pulse current I -3 A CM (a) P 0.73 W Power dissipation at T =25C D A 5.84 mW/C Linear derating factor (b) P 1.05 W Power dissipation at T =25C D A 8.4 mW/C Linear derating factor (c) P 1.25 W Power dissipation at T =25C D A 9.6 mW/C Linear derating factor (d) P 1.81 W Power dissipation at T =25C D A 14.5 mW/C Linear derating factor Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 171 C/W Junction to ambient JA (b) R 119 C/W Junction to ambient JA (c) R 100 C/W Junction to ambient JA (d) R 69 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - March 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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