X-On Electronics has gained recognition as a prominent supplier of ZXTP5240F-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP5240F-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP5240F-7 Diodes Incorporated

ZXTP5240F-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXTP5240F-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 40V PNP SS Mid-Perf Transistor
Datasheet: ZXTP5240F-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.341 ea
Line Total: USD 0.34 
Availability - 51550
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
533
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0888
50 : USD 0.0868
150 : USD 0.0854
500 : USD 0.084

51550
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.341
10 : USD 0.209
100 : USD 0.121
1000 : USD 0.1089
3000 : USD 0.0814
9000 : USD 0.0737
24000 : USD 0.0682

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTP5240F-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP5240F-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP5240F 40V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BV > -40V Case: SOT23 CEO I = -2A high Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. C I = -3A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM Low Saturation Voltage -225mV Max I = -1A. Moisture Sensitivity: Level 1 per J-STD-020 C R = 90m at 0.5A for a Low Equivalent On-Resistance Terminals: Finish Matte Tin Plated Leads, Solderable per CE(SAT) 730mW Power Dissipation MIL-STD-202, Method 208 Complimentary NPN Type: ZXTN4240F Weight 0.008 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Application Qualified to AEC-Q101 Standards for High Reliability Gate Driving MOSFETs and IGBTs Load Switch DC-DC Converters Battery Charging SOT23 E C C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP5240F-7 2D5 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See ZXTP5240F Absolute Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Collector Current I -3 A CM Continuous Collector Current -2 A IC Base Current -300 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 730 mW D Power Dissipation (Note 6) P 600 mW D Thermal Resistance, Junction to Ambient Air (Note 5) R 171 C/W JA Thermal Resistance, Junction to Ambient Air (Note 6) R 209 C/W JA Thermal Resistance, Junction to Lead (Note 7) R 75 C/W JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted on minimum recommended pad layout. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP5240F April 2018 Diodes Incorporated www.diodes.com Document number: DS39609 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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