X-On Electronics has gained recognition as a prominent supplier of ZXTP749FTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP749FTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP749FTA Diodes Incorporated

ZXTP749FTA electronic component of Diodes Incorporated
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Part No.ZXTP749FTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT Zetex PNP Med. Power Transistor
Datasheet: ZXTP749FTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.319 ea
Line Total: USD 0.32 
Availability - 17361
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17361
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.319
10 : USD 0.2145
100 : USD 0.1111
1000 : USD 0.1001
3000 : USD 0.0616

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Maximum Power Dissipation
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTP749FTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP749FTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP749F 25V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BV > -25V Case: SOT23 CEO BV > -35V forward blocking voltage CEO Case Material: Molded Plastic, Green Molding Compound I = -3A Continuous Collector Current C UL Flammability Classification Rating 94V-0 Low Saturation Voltage, V < -150mV -1A. CE(SAT) Moisture Sensitivity: Level 1 per J-STD-020 R = 87m for a low equivalent on-resistance CE(sat) Terminals: Finish Matte Tin Plated Leads 725mW power dissipation Solderable per MIL-STD-202, Method 208 h characterised up to -6A for high current gain hold-up FE Weight 0.008 grams (Approximate) Complementary NPN Type: ZXTN649F Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Application Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability MOSFET Gate Drivers Power Switching in Automotive and Industrial Applications Motor Drive and Control SOT23 E C C B B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTP749FTA 1N8 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP749F Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -35 V V CBO Collector-Emitter Voltage -25 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -3 A I C Peak Pulse Current I -6 A CM Base Current I -500 mA B Peak Pulse Current I -2 A BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 725 mW P D Thermal Resistance, Junction to Ambient (Note 5) 172 C/W R JA Thermal Resistance, Junction to Leads (Note 6) 79 C/W R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1 oz. copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP749F January 2016 Diodes Incorporated www.diodes.com Document Number: DS31901 Rev. 4 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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