ZXTS1000E6TA Diodes Incorporated

ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: V =-12V, I = -1.25A CEO C Schottky Diode: V =40V I = 0.5A R C DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package. SOT23-6 FEATURES Low Saturation Transistor High Gain - 300 minimum Low V , fast switching Schottky F APPLICATIONS Mobile telecomms, PCMCIA & SCSI DC-DC Conversion ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL ZXTS1000E6TA 7 8mm embossed 3000 units 8mm embossed ZXTS1000E6TC 13 10000 units Top View DEVICE MARKING 1000 ISSUE 1 - NOVEMBER 2000 1ZXTS1000E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Transistor Collector-Base Voltage V -12 V CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -1.25 A C Schottky Diode Continuous Reverse Voltage V 40 V R Forward Current I 0.5 A F Non Repetitive Forward Current t100 s I 6.75 A FSM 3 A t 10ms Package Power Dissipation at T =25C amb single die on P 0.725 W D both die on 0.885 W Storage Temperature Range T -55 to +150 C stg Junction Temperature T 125 C j THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) single die on R 138 C/W JA both die on R 113 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions ISSUE 1 - NOVEMBER 2000 2