X-On Electronics has gained recognition as a prominent supplier of 2N2907A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2907A Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N2907A Diotec

2N2907A electronic component of Diotec
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See Product Specifications
Part No.2N2907A
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 60V; 600mA; 625mW; TO92
Datasheet: 2N2907A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
405: USD 0.0155 ea
Line Total: USD 6.28 
Availability - 1959
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 405  Multiples: 1
Pack Size: 1
Availability Price Quantity
4292
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 25
Multiples : 25
25 : USD 0.0549
100 : USD 0.0346
500 : USD 0.0273
825 : USD 0.0209
2275 : USD 0.0198

4316
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2850
Multiples : 25
2850 : USD 0.0334
4000 : USD 0.0273

11640
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 4000
Multiples : 4000
4000 : USD 0.0486
8000 : USD 0.0481
16000 : USD 0.0289
24000 : USD 0.0212
48000 : USD 0.0156

1959
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 405
Multiples : 1
405 : USD 0.0155

   
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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We are delighted to provide the 2N2907A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2907A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N2906 2N2906A 2N2907 2N2907A www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE 2N2906 2N2906A MAXIMUM RATINGS: (T =25C) SYMBOL 2N2907 2N2907A UNITS A Collector-Base Voltage V 60 60 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 400 mW D Power Dissipation (T=25C) P 1.8 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 438 C/W JA Thermal Resistance 97 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N2906 2N2906A 2N2907 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=50V - 20 - 10 nA CBO CB I V =50V, T=150C - 20 - 10 A CBO CB A I V =30V, V=0.5V - 50 - 50 nA CEV CE EB BV I=10A 60 - 60 - V CBO C BV I=10mA 40 - 60 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =150mA, I=15mA - 0.4 - 0.4 V CE(SAT) C B V I =500mA, I=50mA - 1.6 - 1.6 V CE(SAT) C B V I =150mA, I=15mA - 1.3 - 1.3 V BE(SAT) C B V I =500mA, I=50mA - 2.6 - 2.6 V BE(SAT) C B f V =20V, I =50mA, f=100MHz 200 - 200 - MHz T CE C C V =10V, I =0, f=1.0MHz - 8.0 - 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz - 30 - 30 pF ib EB C t V =30V, I =150mA, I=15mA - 45 - 45 ns on CC C B1 t V =6.0V, I =150mA, I =I =15mA - 100 - 100 ns off CC C B1 B2 R4 (30-January 2012)2N2906 2N2906A 2N2907 2N2907A PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C) 2N2906 2N2907 A 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX h V =10V, I =0.1mA (2N2906, 2N2907) 20 - 35 - FE CE C h V =10V, I =0.1mA (2N2906A, 2N2907A) 40 - 75 - FE CE C h V =10V, I =1.0mA (2N2906, 2N2907) 25 - 50 - FE CE C h V =10V, I =1.0mA (2N2906A, 2N2907A) 40 - 100 - FE CE C h V =10V, I =10mA (2N2906, 2N2907) 35 - 75 - FE CE C h V =10V, I =10mA (2N2906A, 2N2907A) 40 - 100 - FE CE C h V =10V, I =150mA 40 120 100 300 FE CE C h V =10V, I =500mA (2N2906, 2N2907) 20 - 30 - FE CE C h V =10V, I =500mA (2N2906A, 2N2907A) 40 - 50 - FE CE C TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R4 (30-January 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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