2N3905 2N3906 www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C) 2N3905 2N3906 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=3.0V - 50 - 50 nA CEV CE EB BV I=10A 40 - 40 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.25 - 0.25 V CE(SAT) C B V I =50mA, I=5.0mA - 0.4 - 0.4 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 30 - 60 - FE CE C h V =1.0V, I=1.0mA 40 - 80 - FE CE C h V =1.0V, I=10mA 50 150 100 300 FE CE C h V =1.0V, I=50mA 30 - 60 - FE CE C h V =1.0V, I=100mA 15 - 30 - FE CE C h V =10V, I =1.0mA, f=1.0kHz 50 200 100 400 fe CE C f V =20V, I =10mA, f=100MHz 200 - 250 - MHz T CE C C V =5.0V, I =0, f=100kHz - 4.5 - 4.5 pF ob CB E C V =0.5V, I =0, f=100kHz - 10 - 10 pF ib EB C NF V =5.0V, I =100A, R=1.0k CE C S f=10Hz to 15.7kHz - 5.0 - 4.0 dB t V =3.0V, V =0.5V, I=10mA on CC BE(OFF) C I=1.0mA - 70 - 70 ns B1 t V =3.0V, I =10mA, I =I =1.0mA - 260 - 300 ns off CC C B1 B2 R2 (17-October 2011)2N3905 2N3906 PNP SILICON TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (17-October 2011) www.centralsemi.com