BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors PNP PNP Si-Epitaxial Planar-Transistoren fr universellen Einsatz Version 2010-06-23 0.1 Power dissipation 625 mW 4.6 Verlustleistung Plastic case TO-92 Kunststoffgehuse (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 C B E Gehusematerial UL94V-0 klassifiziert Special packaging bulk Sonder-Lieferform Schttgut 2 x 1.27 Dimensions - Mae mm Maximum ratings (T = 25C) Grenzwerte (T = 25C) A A BC327 BC328 Collector-Emitter-volt. Kollektor-Emitter-Spannung E-B short - V 50 V 30 V CES Collector-Emitter-volt. Kollektor-Emitter-Spannung B open - V 45 V 25 V CEO Emitter-Base-voltage Emitter-Basis-Spannung C open - V 5 V EBO 1 Power dissipation Verlustleistung P 625 mW ) tot Collector current Kollektorstrom (dc) - I 800 mA C Peak Collector current Kollektor-Spitzenstrom - I 1 A CM Base current Basisstrom - I 100 mA B Junction temperature Sperrschichttemperatur T -55...+150C j Storage temperature Lagerungstemperatur T -55+150C S Characteristics (T = 25C) Kennwerte (T = 25C) j j Min. Typ. Max. 2 DC current gain Kollektor-Basis-Stromverhltnis ) - V = 1 V, - I = 100 mA Group -16 h 100 160 250 CE C FE Group -25 h 160 250 400 FE Group -40 h 250 400 630 FE - V = 1 V, - I = 300 mA Group -16 h 60 130 CE C FE Group -25 h 100 200 FE Group -40 h 170 320 FE 2 Collector-Emitter saturation voltage Kollektor-Emitter-Sttigungsspg. ) - I = 500 mA, - I = 50 mA - V 0.7 V C B CEsat 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden 2 Tested with pulses tp = 300 s, duty cycle 2% Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% Diotec Semiconductor AG BC327-xBK / BC328-xBK Characteristics (T = 25C) Kennwerte (T = 25C) j j Min. Typ. Max. 2 Base-Emitter-voltage Basis-Emitter-Spannung ) - VCE = 1 V, - IC = 300 mA, - VBE 1.2 V Collector-Emitter cutoff current Kollektor-Emitter-Reststrom - V = 45 V, (B-E short) BC327 - I 2 nA 100 nA CE CES - V = 25 V, (B-E short) BC328 - I 2 nA 100 nA CE CES - V = 45 V, T = 125C, (B-E short) BC327 - I 10 A CE j CES - V = 25 V, T = 125C, (B-E short) BC328 - I 10 A CE j CES Gain-Bandwidth Product Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz fT 100 MHz Collector-Base Capacitance Kollektor-Basis-Kapazitt - V = 10 V, I =i = 0, f = 1 MHz C 12 pF CB E e CBO Thermal resistance junction to ambient air 1 R < 200 K/W ) thA Wrmewiderstand Sperrschicht umgebende Luft Recommended complementary NPN transistors BC337 / BC338 Empfohlene komplementre NPN-Transistoren Available current gain groups per type BC327-16 BC328-16 Lieferbare Stromverstrkungsgruppen pro Typ BC327-25 BC328-25 BC327-40 BC328-40 120 % 100 80 60 40 20 P tot 0 0 T 50 100 150 C A 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 2 Tested with pulses t = 300 s, duty cycle 2% Gemessen mit Impulsen t = 300 s, Schaltverhltnis 2% p p 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden 2