BC337-40BK Diotec

BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren fr universellen Einsatz Version 2010-05-27 0.1 Power dissipation 625 mW 4.6 Verlustleistung Plastic case TO-92 Kunststoffgehuse (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 C B E Gehusematerial UL94V-0 klassifiziert Special packaging bulk Sonder-Lieferform Schttgut 2 x 1.27 Dimensions - Mae mm Maximum ratings (T = 25C) Grenzwerte (T = 25C) A A BC337 BC338 Collector-Emitter-volt. Kollektor-Emitter-Spannung E-B short V 50 V 30 V CES Collector-Emitter-volt. Kollektor-Emitter-Spannung B open V 45 V 25 V CEO Emitter-Base-voltage Emitter-Basis-Spannung C open V 5 V EBO 1 Power dissipation Verlustleistung P 625 mW ) tot Collector current Kollektorstrom (dc) I 800 mA C Peak Collector current Kollektor-Spitzenstrom I 1 A CM Base current Basisstrom I 100 mA B Junction temperature Sperrschichttemperatur T -55...+150C j Storage temperature Lagerungstemperatur T -55+150C S Characteristics (T = 25C) Kennwerte (T = 25C) j j Min. Typ. Max. 2 DC current gain Kollektor-Basis-Stromverhltnis ) V = 1 V, I = 100 mA Group -16 h 100 160 250 CE C FE Group -25 h 160 250 400 FE Group -40 h 250 400 630 FE V = 1 V, I = 300 mA Group -16 h 60 130 CE C FE Group -25 h 100 200 FE Group -40 h 170 320 FE 2 Collector-Emitter saturation voltage Kollektor-Emitter-Sttigungsspg. ) I = 500 mA, I = 50 mA V 0.7 V C B CEsat 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden 2 Tested with pulses tp = 300 s, duty cycle 2% Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% Diotec Semiconductor AG BC337-xBK / BC338-xBK Characteristics (T = 25C) Kennwerte (T = 25C) j j Min. Typ. Max. 2 Base-Emitter-voltage Basis-Emitter-Spannung ) VCE = 1 V, IC = 300 mA, VBE 1.2 V Collector-Emitter cutoff current Kollektor-Emitter-Reststrom V = 45 V, (B-E short) BC337 I 2 nA 100 nA CE CES V = 25 V, (B-E short) BC338 I 2 nA 100 nA CE CES V = 45 V, T = 125C, (B-E short) BC337 I 10 A CE j CES V = 25 V, T = 125C, (B-E short) BC338 I 10 A CE j CES Gain-Bandwidth Product Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz fT 100 MHz Collector-Base Capacitance Kollektor-Basis-Kapazitt V = 10 V, I =i = 0, f = 1 MHz C 12 pF CB E e CBO Thermal resistance junction to ambient air 1 R < 200 K/W ) thA Wrmewiderstand Sperrschicht umgebende Luft Recommended complementary PNP transistors BC327 / BC328 Empfohlene komplementre PNP-Transistoren Available current gain groups per type BC337-16 BC338-16 Lieferbare Stromverstrkungsgruppen pro Typ BC337-25 BC338-25 BC337-40 BC338-40 120 % 100 80 60 40 20 P tot 0 0 T 50 100 150 C A 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 2 Tested with pulses t = 300 s, duty cycle 2% Gemessen mit Impulsen t = 300 s, Schaltverhltnis 2% p p 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden 2