BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor November 2014 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC546, V = 65 V CEO Low-Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and BC560 TO-92 1 1. Collector 2. Base 3. Emitter Ordering Information Part Number Marking Package Packing Method BC546ABU BC546A TO-92 3L Bulk BC546ATA BC546A TO-92 3L Ammo BC546BTA BC546B TO-92 3L Ammo BC546BTF BC546B TO-92 3L Tape and Reel BC546CTA BC546C TO-92 3L Ammo BC547ATA BC547A TO-92 3L Ammo BC547B BC547B TO-92 3L Bulk BC547BBU BC547B TO-92 3L Bulk BC547BTA BC547B TO-92 3L Ammo BC547BTF BC547B TO-92 3L Tape and Reel BC547CBU BC547C TO-92 3L Bulk BC547CTA BC547C TO-92 3L Ammo BC547CTFR BC547C TO-92 3L Tape and Reel BC548BU BC548 TO-92 3L Bulk BC548BTA BC548B TO-92 3L Ammo BC548CTA BC548C TO-92 3L Ammo BC549BTA BC549B TO-92 3L Ammo BC549BTF BC549B TO-92 3L Tape and Reel BC549CTA BC549C TO-92 3L Ammo BC550CBU BC550C TO-92 3L Bulk BC550CTA BC550C TO-92 3L Ammo 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 1 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit BC546 80 V Collector-Base Voltage BC547 / BC550 50 V CBO BC548 / BC549 30 BC546 65 V Collector-Emitter Voltage BC547 / BC550 45 V CEO BC548 / BC549 30 BC546 / BC547 6 V Emitter-Base Voltage V EBO BC548 / BC549 / BC550 5 I Collector Current (DC) 100 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 C J T Storage Temperature Range -65 to +150 C STG Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Typ. Max. Unit I Collector Cut-Off Current V = 30 V, I = 0 15 nA CBO CB E h DC Current Gain V = 5 V, I = 2 mA 110 800 FE CE C I = 10 mA, I = 0.5 mA 90 250 Collector-Emitter Saturation C B V (sat) mV CE Voltage I = 100 mA, I = 5 mA 250 600 C B I = 10 mA, I = 0.5 mA 700 C B V (sat) Base-Emitter Saturation Voltage mV BE I = 100 mA, I = 5 mA 900 C B V = 5 V, I = 2 mA 580 660 700 CE C V (on) Base-Emitter On Voltage mV BE V = 5 V, I = 10 mA 720 CE C V = 5 V, I = 10 mA, CE C f Current Gain Bandwidth Product 300 MHz T f = 100 MHz C Output Capacitance V = 10 V, I = 0, f = 1 MHz 3.5 6.0 pF ob CB E C Input Capacitance V = 0.5 V, I = 0, f = 1 MHz 9 pF ib EB C BC546 / BC547 / BC548 2.0 10.0 = 5 V, I = 200 A, V CE C f = 1 kHz, R = 2 k BC549 / BC550 1.2 4.0 G Noise NF dB Figure BC549 1.4 4.0 V = 5 V, I = 200 A, CE C R = 2 k, f = 30 to 15000 MHz BC550 G 1.4 3.0 h Classification FE Classification A B C h 110 ~ 220 200 ~ 450 420 ~ 800 FE 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 2