W E E E S H BC556 ... BC559 BC556 ... BC559 I = -100 mA V = -30 ...-65 V C CEO h ~ 120/200/400 P = 500 mW FE tot General Purpose PNP Transistors Tjmax = 150C Universal-PNP-Transistoren Version 2018-02-01 Typical Applications Typische Anwendungen TO-92 (10D3) Signal processing, Signalverarbeitung, (1) Switching, Amplification Schalten, Verstrken 1 1 Commercial grade ) Standardausfhrung ) C B E Features Besonderheiten General Purpose Universell anwendbar Three current gain groups Drei Stromverstrkungsklassen Compliant to RoHS, REACH, Konform zu RoHS, REACH, Pb 1 1 Conflict Minerals ) Konfliktmineralien ) 2 x 2.54 1 1 Mechanical Data ) Mechanische Daten ) (1) Taped in ammo pack 4000 (1) Gegurtet in Ammo-Pack 0.1 4.6 (Raster 2.54) (Raster 2.54) (2) (2) On request: in bulk 5000 (2) Auf Anfrage: Schttgut (Raster 1.27, suffix BK) (Raster 1.27, Suffix BK) Weight approx. 0.18 g Gewicht ca. C B E Case material UL 94V-0 Gehusematerial Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen 2 x 1.27 MSL N/A Dimensions - Mae mm Current gain groups Recommended complementary NPN transistors Stromverstrkungsgruppen Empfohlene komplementre NPN-Transistoren BC556A BC556B BC556C BC557A BC557B BC557C BC546 ... BC549 BC558A BC558B BC558C BC559A BC559B BC559C 2 2 Maximum ratings ) Grenzwerte ) BC556 BC557 BC558/559 Collector-Emitter-voltage Kollektor-Emitter-Spannung E-B short - V 80 V 50 V 30 V CES Collector-Emitter-voltage Kollektor-Emitter-Spannung B open - V 65 V 45 V 30 V CEO Emitter-Base-voltage Emitter-Basis-Spannung E open - V 80 V 50 V 30 V CBO Emitter-Base-voltage Emitter-Basis-Spannung C open - V 5 V EBO 3 Power dissipation Verlustleistung Ptot 500 mW ) Collector current Kollektorstrom DC - I 100 mA C Peak Collector current Kollektor-Spitzenstrom - I 200 mA CM Peak Base current Basis-Spitzenstrom - I 200 mA BM Peak Emitter current Emitter-Spitzenstrom I 200 mA EM Junction temperature Sperrschichttemperatur Tj -55...+150C Storage temperature Lagerungstemperatur T -55+150C S 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 T = 25C, unless otherwise specified T = 25C, wenn nicht anders angegeben A A 3 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden Diotec Semiconductor AG BC556 ... BC559 Characteristics Kennwerte T = 25C Min. Typ. Max. j 1 DC current gain Kollektor-Basis-Stromverhltnis ) - V = 5 V - I = 10 A Group A 90 CE C Group B h 150 FE Group C 270 - I = 2 mA Group A 110 220 C Group B h 200 450 FE Group C 420 800 - I = 100 mA Group A 120 C Group B hFE 200 Group C 400 Collector-Emitter cutoff current Kollektor-Emitter-Reststrom 80 V BC556 50 V B-E short BC557 - I 0.2 nA 15 nA - VCE = CES 30 V BC558 / BC559 80 V BC556 B-E short - VCE = 50 V BC557 - ICES 4 A T = 125C j 30 V BC558 / BC559 1 Collector-Emitter saturation voltage Kollektor-Emitter-Sttigungsspg. ) - IC = 10 mA - IB = 0.5 mA 80 mV 300 mV - V CEsat - I = 100 mA - I = 5 mA 250 mV 650 mV C B 1 Base-Emitter saturation voltage Basis-Emitter-Sttigungsspannung ) - I = 10 mA - I = 0.5 mA 700 mV C B - V BEsat - I = 100 mA - I = 5 mA 900 mV C B 1 Base-Emitter-voltage Basis-Emitter-Spannung ) - V = 5 V - I = 2 mA 600 mV 660 mV 750 mV CE C - V BE - I = 10 mA 820 mV C Gain-Bandwidth Product Transitfrequenz - V = 5 V, - I = 10 mA, f = 100 MHz f 150 MHz CE C T Collector-Base Capacitance Kollektor-Basis-Kapazitt - V = 10 V, I =i = 0, f = 1 MHz C 3.5 pF 6 pF CB E e CBO Emitter-Base Capacitance Emitter-Basis-Kapazitt - V = 0.5 V, I = i = 0, f = 1 MHz C 10 pF EB C c EBO Noise figure Rauschzahl - VCE = 5 V, - IC = 200 A, RG = 2 k BC556 ... BC558 2 dB 10 dB F f = 1 kHz, f = 200 Hz BC559 1 dB 4 dB Thermal resistance junction to ambient 2 RthA < 200 K/W ) Wrmewiderstand Sperrschicht Umgebung Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Tested with pulses t = 300 s, duty cycle 2% Gemessen mit Impulsen t = 300 s, Schaltverhltnis 2% p p 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden 2