X-On Electronics has gained recognition as a prominent supplier of BC817-40 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817-40 Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC817-40 Diotec

BC817-40 electronic component of Diotec
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Part No.BC817-40
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistors (NPN/PNP) NPN 500mA 45V SOT-23 RoHS
Datasheet: BC817-40 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0935 ea
Line Total: USD 0.09 
Availability - 51246
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
51246
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0935
10 : USD 0.0539
100 : USD 0.0363
500 : USD 0.0275
1000 : USD 0.0253
3000 : USD 0.0187
9000 : USD 0.0154
24000 : USD 0.0154
45000 : USD 0.0132

276072
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1246
10 : USD 0.0448
100 : USD 0.0326
500 : USD 0.0262
985 : USD 0.0174
2709 : USD 0.0164
45000 : USD 0.0157

23280
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0404
9000 : USD 0.0398
27000 : USD 0.0393
51000 : USD 0.0385
102000 : USD 0.0381

544170
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0259
6000 : USD 0.0232
9000 : USD 0.0218
15000 : USD 0.0204
21000 : USD 0.0195
30000 : USD 0.0185
75000 : USD 0.0165
150000 : USD 0.0152
300000 : USD 0.014

41516
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 4900
Multiples : 100
4900 : USD 0.0409

280670
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 4150
Multiples : 1
4150 : USD 0.0218
12000 : USD 0.0207

   
Manufacturer
Product Category
Brand
Rohs
Package
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
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We are delighted to provide the BC817-40 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817-40 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817-16/-25/-40 Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Green compound (Halogen free) with suffix on packing code and prefix on date code MECHANICAL DATA - Case: SOT- 23 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s SOT-23 - Weight: 0.008gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT P Power dissipation 300 mW D Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO V Emitter-Base Voltage 5 V EBO Collector Current I 500 mA C Thermal Resistance (Junction to Ambient) R 417 C JA Junction Temperature T 150 C J Storage Temperature Range T -55 to + 150 C STG Notes: 1. Valid provided that electrodes are kept at ambient temperature PARAMETER BC817-16 BC817-25 BC817-40 SYMBOL UNIT Collector-Base Breakdown Voltage I = 10A I = 0 V 50 V C E (BR)CBO I = 10mA I = 0 V Collector-Emitter Breakdown Voltage 45 V C B (BR)CEO Emitter-Base Breakdown Voltage I = 1A I = 0 V 5 V E C (BR)EBO Collector Cut-off Current V = 45V I = 0 I 0.1 A CB E CBO Emitter Cut-off Current V = 4V I = 0 I 0.1 A EB C EBO Collector-Emitter Saturation Voltage I = 500mA I = 50 mA V 0.7 V C B CE(sat) I = 500mA I = 50 mA V Base-Emitter Saturation Voltage 1.2 V C B BE(sat) V = 5V I = 10mA f 100 Transition Frequency f= 100MHz MHz CE C T Junction Capacitance V =10V f= 1.0MHz C 10 pF CB CBO V = 1V I = 100mA 100 400 600 CE C DC Current Gain h FE V = 1V I = 100mA >40 160 250 CE C h DC Current Gain 100-250 160-400 250-600 FE Vce=1V Ic=500mA h 40 Min. DC Current Gain FE Version: G14 Document Number: DS S1404005BC817-16/-25/-40 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 2 Collector-Emitter Saturation Voltage VS. Fig.1 Typical Pulsed Current Gain VS. Collector Current 10 10.00 o 25 C 1 1.00 0.1 0.10 0.01 V = 5 V CE 0.001 0.01 0 100 200 300 400 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 h FE V Collector Emitter Voltage (V) CE(sat) , Fig. 3 Base-Emitter Saturation Voltage Fig. 3 Fig. 4 Base-Emitter On Voltage VS. Collector Current VS. Collector Current 1000 1.000 100 0.100 o 25 C o 25 C 10 0.010 0.001 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V , Base-Emitter on Voltage (V) BE(sat) V , Base-Emitter Voltage (V) BE Fig. 5 Collector-Base Capacitance VS. Fig. 5 Collector-Base Voltage 40 30 20 10 0 0 4 8 12 16 20 24 28 V , Collector-Base Voltage (V) CB Version: G14 Document Number: DS S1404005 I , Collector Current (mA) C I , Collector Current (A) Collector-Base Capacitance (pF) C I Collector Current (mA) C , I , Collector Current (A) C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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