X-On Electronics has gained recognition as a prominent supplier of BC846C Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC846C Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC846C Diotec

BC846C electronic component of Diotec
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See Product Specifications
Part No.BC846C
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 65V; 100mA; 250mW; SOT23
Datasheet: BC846C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.21 ea
Line Total: USD 0.21 
Availability - 53256
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
53256
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.21
10 : USD 0.1246
25 : USD 0.0829
100 : USD 0.0665
250 : USD 0.0581
500 : USD 0.0498
1000 : USD 0.0416
1421 : USD 0.012
3904 : USD 0.0113

   
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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We are delighted to provide the BC846C from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC846C and other electronic components in the Bipolar Transistors - BJT category and beyond.

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W E E E S H BC846A ... BC850C BC846A ... BC850C I = 100 mA V = 30...65 V C CEO h = 180/290/520 P = 250 mW FE tot SMD General Purpose NPN Transistors Tjmax = 150C SMD Universal-NPN-Transistoren Version 2018-09-10 Typical Applications Typische Anwendungen SOT-23 Signal processing, Signalverarbeitung, (TO-236) Switching, Amplification Schalten, Verstrken Commercial grade Standardausfhrung 1 1 +0.1 Suffix -Q: AEC-Q101 compliant ) Suffix -Q: AEC-Q101 konform ) 0.1 -0.2 1.1 2.9 1 1 Suffix -AQ: in AEC-Q101 qualification ) Suffix -AQ: in AEC-Q101 Qualifikation ) +0.1 0.4 -0.05 3 Features Besonderheiten General Purpose Universell anwendbar Type Three current gain groups Drei Stromverstrkungsklassen Code Compliant to RoHS, REACH, Konform zu RoHS, REACH, 1 2 1 1 Pb Conflict Minerals ) Konfliktmineralien ) 0.1 1 1 1.9 Mechanical Data ) Mechanische Daten ) Taped and reeled 3000 / 7 Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. 1 = B 2 = E 3 = C Case material UL 94V-0 Gehusematerial Dimensions - Mae mm Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen MSL = 1 Type Complementary PNP transistors Code Komplementre PNP-Transistoren BC846A/-Q/-AQ = 1A BC847A/-Q/-AQ = 1E BC848A/-AQ = 1E BC846B/-Q/-AQ = 1B BC847B/-Q/-AQ = 1F BC848B/-AQ = 1F BC846C/-AQ = 1C BC847C/-Q/-AQ = 1G BC848C/-AQ = 1G BC856 ... BC860 BC850A/-AQ = 1E BC849A/-AQ = 1E BC850B/-AQ = 1F BC849B/-AQ = 1F BC850C/-AQ = 1G BC849C/-AQ = 1G 2 2 Maximum ratings ) Grenzwerte ) BC848 BC846 BC847 BC850 BC849 Collector-Emitter-voltage Kollektor-Emitter-Spannung B open V 65 V 45 V 45 V 30 V CEO Collector-Base-voltage Kollektor-Basis-Spannung E open V 80 V 50 V 50 V 30 V CBO Emitter-Base-voltage Emitter-Basis-Spannung C open VEBO 6 V 5 V 3 Power dissipation Verlustleistung P 250 mW ) tot Collector current Kollektorstrom DC I 100 mA C Peak Collector current Kollektor-Spitzenstrom I 200 mA CM Junction temperature Sperrschichttemperatur T -55...+150C j Storage temperature Lagerungstemperatur TS -55+150C 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25C, unless otherwise specified TA = 25C, wenn nicht anders angegeben 2 3 Mounted on P.C. board with 3 mm copper pad at each terminal 2 Montage auf Leiterplatte mit 3 mm Kupferbelag (Ltpad) an jedem Anschluss Diotec Semiconductor AG BC846A ... BC850C Characteristics Kennwerte T = 25C Min. Typ. Max. j DC current gain Kollektor-Basis-Stromverhltnis Group A 90 V = 5 V, I = 10 A Group B h 150 CE C FE Group C 270 Group A 110 180 220 V = 5 V, I = 2 mA Group B h 200 290 450 CE C FE Group C 420 520 800 1 Collector-Emitter saturation voltage Kollektor-Sttigungsspannung ) I = 10 mA, I = 0.5 mA 90 mV 250 mV C B V CEsat I = 100 mA, I = 5 mA 200 mV 600 mV C B 2 Base-Emitter saturation voltage Basis-Sttigungsspannung ) I = 10 mA, I = 0.5 mA 700 mV C B V BEsat I = 100 mA, I = 5 mA 900 mV C B 2 Base-Emitter-voltage Basis-Emitter-Spannung ) V = 5 V, I = 2 mA 580 mV 660 mV 700 mV CE C V BE VCE = 5 V, IC = 10 mA 720 mV Collector-Base cutoff current Kollektor-Basis-Reststrom V = 30 V, (E open) 15 nA CB I CBO VCE = 30 V, Tj = 125C, (E open) 5 A Emitter-Base cutoff current VEB = 5 V, (C open) IEBO 100 nA Gain-Bandwidth Product Transitfrequenz V = 5 V, I = 10 mA, f = 100 MHz f 300 MHz CE C T Collector-Base Capacitance Kollektor-Basis-Kapazitt V = 10 V, I =i = 0, f = 1 MHz C 3.5 pF 6 pF CB E e CBO Emitter-Base Capacitance Emitter-Basis-Kapazitt V = 0.5 V, I = i = 0, f = 1 MHz C 9 pF EB C c EBO Thermal resistance junction to ambient 2 R < 420 K/W ) thA Wrmewiderstand Sperrschicht Umgebung Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Tested with pulses t = 300 s, duty cycle 2% p Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% 2 2 Mounted on P.C. board with 3 mm copper pad at each terminal 2 Montage auf Leiterplatte mit 3 mm Kupferbelag (Ltpad) an jedem Anschluss 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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