X-On Electronics has gained recognition as a prominent supplier of BC856B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC856B Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC856B Diotec

BC856B electronic component of Diotec
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See Product Specifications
Part No.BC856B
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 65V; 100mA; 250mW; SOT23
Datasheet: BC856B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0935 ea
Line Total: USD 0.09 
Availability - 17906
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17906
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0935
10 : USD 0.0451
100 : USD 0.0275
500 : USD 0.0209
1000 : USD 0.0187
3000 : USD 0.0165
9000 : USD 0.0132
24000 : USD 0.0099

112196
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.126
10 : USD 0.0364
100 : USD 0.0266
500 : USD 0.021
1000 : USD 0.0196

241530
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0251
6000 : USD 0.0218
9000 : USD 0.0203
15000 : USD 0.0183
21000 : USD 0.0173
30000 : USD 0.0161
75000 : USD 0.0138
150000 : USD 0.0126
300000 : USD 0.0113

3986
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 690
Multiples : 1
690 : USD 0.0342
1000 : USD 0.0295
3000 : USD 0.0238
6000 : USD 0.0208
9000 : USD 0.0191
15000 : USD 0.0176
21000 : USD 0.0164
30000 : USD 0.0153
75000 : USD 0.0132
150000 : USD 0.012
300000 : USD 0.0108

10573
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 6600
Multiples : 100
6600 : USD 0.0321

931
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 715
Multiples : 1
715 : USD 0.0252

11640
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 6000
Multiples : 3000
6000 : USD 0.0195
9000 : USD 0.0164
27000 : USD 0.0153
51000 : USD 0.0147
102000 : USD 0.0146

108617
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 5450
Multiples : 1
5450 : USD 0.0161
12000 : USD 0.0151

   
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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We are delighted to provide the BC856B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC856B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product SOT-23 Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix on packing code and prefix on date code Mechanical Data Case : SOT- 23 small outline plastic package Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed High temperature soldering guaranteed : 260C/10s Weight : 0.008 grams (approximately) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Symbol Value Units Parameter Power Dissipation P 200 mW D BC856 -80 Collector-Base Voltage V -50 V BC857 CBO BC858 -30 -65 BC856 V Collector-Emitter Voltage -45 V BC857 CEO BC858 -30 Emitter-Base Voltage V -5 V EBO Collector Current I -0.1 A C Junction and Storage Temperature Range T , T -55 to + 150 C J STG Notes : 1. Valid provided that electrodes are kept at ambient temperature Version : F14Small Signal Product o Electrical Characteristics ( T = 25 C unless otherwise noted ) A Symbol Min Max Units Parameter BC856 -80 BC857 I = -10 AI = 0 V - V Collector-Base Breakdown Voltage -50 C E (BR)CBO BC858 -30 BC856 -65 BC857 I = -10mA I = 0 V - V Collector-Emitter Breakdown Voltage -45 C B (BR)CEO BC858 -30 I = -1 AI = 0 V Emitter-Base Breakdown Voltage -5 - V E C (BR)EBO BC856 V = -70V - -100 CB I = 0 I Collector Cut-off Current BC857 V = -45V - -100 nA E CBO CB BC858 V = -25V - -100 CB V = -5V I =0 I Emitter Cut-off Current --0.1 A EB C EBO BC856A, BC857A, BC858A 125 250 BC856B, BC857B, BC858B V = -5V I = -2mA h DC Current Gain 220 475 CE C FE BC857C, BC858C 420 800 Collector-Emitter Saturation Voltage I = -100mA I = -5mA V - -0.65 V C B CE(sat) I = -100mA I = -5mA V Base-Emitter Saturation Voltage --1.1 V C B BE(sat) Transition Frequency V = -5V I = -10mA f= 100MHz f 100 - MHz CE C T Version : F14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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