W E E E S H BC856AW ... BC859CW BC856AW ... BC859CW I = 100 mA V = 30...65 V C CEO h = 180/290/520 P = 200 mW FE tot SMD General Purpose PNP Transistors Tjmax = 150C SMD Universal-PNP-Transistoren Version 2019-01-11 Typical Applications Typische Anwendungen Signal processing, Signalverarbeitung, SOT-323 Switching, Amplification Schalten, Verstrken Commercial grade Standardausfhrung 1 1 Suffix -Q: AEC-Q101 compliant ) Suffix -Q: AEC-Q101 konform ) 1 1 0.1 Suffix -AQ: in AEC-Q101 qualification ) Suffix -AQ: in AEC-Q101 Qualifikation ) 0.1 2 1 0.3 Features Besonderheiten 3 General Purpose Universell anwendbar Type Three current gain groups Drei Stromverstrkungsklassen Code Compliant to RoHS, REACH, Konform zu RoHS, REACH, 1 1 1 2 Pb Conflict Minerals ) Konfliktmineralien ) 1.3 1 1 Mechanical Data ) Mechanische Daten ) Taped and reeled 3000 / 7 Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. 1 = B 2 = E 3 = C Case material UL 94V-0 Gehusematerial Dimensions - Mae mm Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen MSL = 1 Type Recommended complementary NPN transistors Code Empfohlene komplementre NPN-Transistoren BC856AW = 3A BC856BW/-AQ = 3B BC857AW = 3E BC857BW = 3F BC857CW = 3G BC846W ... BC849W BC858AW = 3E BC858BW = 3F BC858CW = 3G BC859BW = 3F BC859CW = 3G 2 2 Maximum ratings ) Grenzwerte ) BC856W/ BC858W BC857W -AQ BC859W Collector-Emitter-voltage Kollektor-Emitter-Spannung B open VCEO 65 V 45 V 30 V Collector-Base-voltage Kollektor-Basis-Spannung E open V 80 V 50 V 30 V CBO Emitter-Base-voltage Emitter-Basis-Spannung C open V 5 V EBO 3 Power dissipation Verlustleistung P 200 mW ) tot Collector current Kollektorstrom DC I 100 mA C Peak Collector current Kollektor-Spitzenstrom ICM 200 mA Peak Base current Basis-Spitzenstrom - I 200 mA BM Peak Emitter current Emitter-Spitzenstrom I 200 mA EM Junction temperature Sperrschichttemperatur T -55...+150C j Storage temperature Lagerungstemperatur T -55+150C S 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25C, unless otherwise specified TA = 25C, wenn nicht anders angegeben 2 3 Mounted on P.C. board with 3 mm copper pad at each terminal 2 Montage auf Leiterplatte mit 3 mm Kupferbelag (Ltpad) an jedem Anschluss Diotec Semiconductor AG BC856AW ... BC859CW Characteristics Kennwerte T = 25C Min. Typ. Max. j DC current gain Kollektor-Basis-Stromverhltnis Group A 140 V = 5 V, I = 10 A Group B h 250 CE C FE Group C 480 Group A 125 180 250 V = 5 V, I = 2 mA Group B h 220 290 475 CE C FE Group C 420 520 800 1 Collector-Emitter saturation voltage Kollektor-Sttigungsspannung ) I = 10 mA, I = 0.5 mA 75 mV 300 mV C B V CEsat I = 100 mA, I = 5 mA 250 mV 650 mV C B 2 Base-Emitter saturation voltage Basis-Sttigungsspannung ) I = 10 mA, I = 0.5 mA 700 mV C B V BEsat I = 100 mA, I = 5 mA 850 mV C B 2 Base-Emitter-voltage Basis-Emitter-Spannung ) V = 5 V, I = 2 mA 600 mV 650 mV 750 mV CE C V BE VCE = 5 V, IC = 10 mA 820 mV Collector-Base cutoff current Kollektor-Basis-Reststrom V = 30 V, (E open) 15 nA CB I CBO VCE = 30 V, Tj = 125C, (E open) 5 A Emitter-Base cutoff current VEB = 5 V, (C open) IEBO 100 nA Gain-Bandwidth Product Transitfrequenz V = 5 V, I = 10 mA, f = 100 MHz f 100 MHz CE C T Collector-Base Capacitance Kollektor-Basis-Kapazitt V = 10 V, I =i = 0, f = 1 MHz C 4.5 pF CB E e CBO Emitter-Base Capacitance Emitter-Basis-Kapazitt V = 0.5 V, I = i = 0, f = 1 MHz C 10 pF 15 pF EB C c EBO Noise figure Rauschzahl - V = 5 V, - I = 200 A, R = 2 k BC856W ... BC858W 10 dB CE C G F f = 1 kHz, f = 200 Hz BC859W 1 dB 4 dB Thermal resistance junction to ambient 2 R < 620 K/W ) thA Wrmewiderstand Sperrschicht Umgebung Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Tested with pulses t = 300 s, duty cycle 2% p Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% 2 2 Mounted on P.C. board with 3 mm copper pad at each terminal 2 Montage auf Leiterplatte mit 3 mm Kupferbelag (Ltpad) an jedem Anschluss 2