INCH-POUND MIL-M-38510/754B 8 March 2005 SUPERSEDING MIL-M-38510/754A 29 June 1992 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, ADVANCED CMOS, LATCHES, MONOLITHIC SILICON Reactivated after 8 March 2005 and may be used for new and existing designs and acquisitions This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product herein consists of this specification sheet and MIL-PRF 38535 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance (RHA) are provided and are reflected in the complete Part or Identifying Number (PIN). For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 (see 6.3). 1.2 Part or identifying number (PIN). The PIN is in accordance with MIL-PRF-38535 and as specified herein. 1.2.1 Device types. The device types are as follows: Device type Circuit 01 To be included at a later date 02 To be included at a later date 03 Octal transparent latch with three-state outputs 04 Octal transparent latch with inverted three-state outputs 05 Octal D-type latch with inverted three-state outputs 06 Octal D-type latch with three-state outputs 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 or CDFP3-F20 20 Flat pack Z GDFP1-G20 20 Flat pack with gull wing 2 CQCC1-N20 20 Square leadless-chip-carrier Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or email CMOS dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-M-38510/754B 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (V )........................................................................................ -0.5 V dc to +6.0 V dc CC DC input voltage range (V ) ...................................................................................... -0.5 V dc to V + 0.5 V dc IN CC DC output voltage range (V ) ................................................................................. -0.5 V dc to V + 0.5 V dc OUT CC Clamp diode current (I , I ) ..................................................................................... 20 mA IK OK DC output current (I ) ............................................................................................. 50 mA OUT DC V or GND current (I , I ) ............................................................................. 100 mA CC CC GND Storage temperature range (T ) ............................................................................. -65C to +150C STG Maximum power dissipation (P ) ............................................................................... 500 mW D Lead temperature (soldering, 10 seconds) ................................................................ +300C Thermal resistance, junction-to-case ( )................................................................. See MIL-STD-1835 JC Junction temperature (T ) .......................................................................................... +175C J Case operating temperature range (T )..................................................................... -55C to +125C C 1.4 Recommended operating conditions. 2/ 3/ 4/ Supply voltage range (V )........................................................................................ +3.0 V dc to +5.5 V dc CC Input voltage range (V ) ............................................................................................ +0.0 V dc to V IN CC Output voltage range (V )....................................................................................... +0.0 V dc to V OUT CC Case operating temperature range (T )..................................................................... -55C to +125C C Maximum low level input voltage (V ) ....................................................................... 0.90 V dc at V = 3.0 V dc IL CC 1.35 V dc at V = 4.5 V dc CC 1.65 V dc at V = 5.5 V dc CC Minimum high level input voltage (V )....................................................................... 2.10 V dc at V = 3.0 V dc IH CC 3.15 V dc at V = 4.5 V dc CC 3.85 V dc at V = 5.5 V dc CC Input rise and fall rate (t/V) maximum: V = 3.6 V, V = 5.5 V ......................................................................................... 8 ns/V CC CC Minimum setup time, Dn to LE (t ): Device type: 03 04 05 and 06 Units s V = 3.0 V dc T = +25C, -55C ................................................ 5.5 2.0 2.0 ns CC C T = +125C.......................................................... 6.5 2.0 2.0 ns C V = 4.5 V dc T = +25C, -55C................................................ 4.0 2.0 2.0 ns CC C T = +125C.......................................................... 5.0 2.0 2.0 ns C Minimum hold time, Dn to LE (t ): Device type: 03 04 05 and 06 Units h V = 3.0 V dc T = +25C, -55C................................................ 1.0 5.0 5.0 ns CC C T = +125C.......................................................... 1.0 5.0 5.0 ns C V = 4.5 V dc T = +25C, -55C................................................ 1.0 3.0 3.0 ns CC C T = +125C.......................................................... 1.0 3.0 3.0 ns C Minimum LE pulse width (t ): Device type: 03 04 05 and 06 Units w V = 3.0 V dc T = +25C, -55C................................................ 5.5 10.0 10.0 ns CC C T = +125C.......................................................... 6.5 10.0 10.0 ns C V = 4.5 V dc T = +25C, -55C................................................ 5.0 6.0 6.0 ns CC C T = +125C.......................................................... 5.0 6.0 6.0 ns C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads (Si)/s): Device type 03 ...................................................................................................... 100 krads (Si) 2 Single Event Latch-up (SEL) ................................................................................ 93 MeV-cm /mg 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. The maximum junction temperature may be exceeded for allowable short duration burn-in screening conditions in accordance with MIL-PRF-38535. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transitions and no stored data loss with the following conditions: V 70 percent of V , V 30 IH CC IL percent of V , V 70 percent of V at 20 A, V 30 percent of V at 20 A. CC OH CC OL CC 4/ Unless otherwise specified, the values listed above shall apply over the full V and T recommended operating range. CC C 2