X-On Electronics has gained recognition as a prominent supplier of MR0DL08BMA45R MRAM across the USA, India, Europe, Australia, and various other global locations. MR0DL08BMA45R MRAM are a product manufactured by Everspin. We provide cost-effective solutions for MRAM, ensuring timely deliveries around the world.

MR0DL08BMA45R Everspin

MR0DL08BMA45R electronic component of Everspin
MR0DL08BMA45R Everspin
MR0DL08BMA45R MRAM
MR0DL08BMA45R  Semiconductors

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See Product Specifications
Part No. MR0DL08BMA45R
Manufacturer: Everspin
Category: MRAM
Description: MRAM 1Mb, 2.7V 128K x 8 45ns Parallel MRAM
Datasheet: MR0DL08BMA45R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 15.62 ea
Line Total: USD 31240 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 15.62

   
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We are delighted to provide the MR0DL08BMA45R from our MRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MR0DL08BMA45R and other electronic components in the MRAM category and beyond.

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MR0DL08B FEATURES Dual Supply 128K x 8 MRAM 3.3 Volt V power supply with a range of 2.7V to 3.6V DD I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces Fast 45 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20-years at temperature All products meet MSL-3 moisture sensitivity level RoHS-compliant small footprint BGA package BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems RoHS for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR0DL08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0DL08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0DL08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0DL08B is available in small footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. The MR0DL08B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 C). CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 2 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 8 4. ORDERING INFORMATION....................................................................... 13 5. MECHANICAL DRAWING.......................................................................... 14 6. REVISION HISTORY...................................................................................... 15 How to Reach Us.......................................................................................... 15 Copyright Everspin Technologies 2018 1 MR0DL08B Rev. 1.3, 3/2018MR0DL08B 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram OUTPUT G ENABLE OUTPUT ENABLE BUFFER 7 A 16:0 ADDRESS 10 ROW BUFFER COLUMN 17 DECODER DECODER CHIP E 8 OUTPUT 8 8 ENABLE SENSE BUFFER BUFFER AMPS 128Kx 8 BIT MEMORY WRITE W ARRAY ENABLE FINAL BUFFER 8 8 WRITE 8 WRITE DQ 7:0 DRIVER DRIVERS WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable DQ Data I/O V Power Supply DD V I/O Power Supply DDQ V Ground SS DC Do Not Connect NC No Connection, Ball D3, H1, H6, G2 Reserved for Future Expansion Copyright Everspin Technologies 2018 2 MR0DL08B Rev. 1.2, 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
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