X-On Electronics has gained recognition as a prominent supplier of MR256D08BMA45 MRAM across the USA, India, Europe, Australia, and various other global locations. MR256D08BMA45 MRAM are a product manufactured by Everspin. We provide cost-effective solutions for MRAM, ensuring timely deliveries around the world.

MR256D08BMA45 Everspin

MR256D08BMA45 electronic component of Everspin
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See Product Specifications
Part No.MR256D08BMA45
Manufacturer: Everspin
Category: MRAM
Description: NVRAM 256Kb 3.3V 45ns 32Kx8 Parallel MRAM
Datasheet: MR256D08BMA45 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.3285 ea
Line Total: USD 9.33

Availability - 19
Ship by Wed. 24 Jul to Mon. 29 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Wed. 24 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 9.307
10 : USD 9.0914
30 : USD 8.947
100 : USD 8.8027

   
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RoHS - XON
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We are delighted to provide the MR256D08BMA45 from our MRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MR256D08BMA45 and other electronic components in the MRAM category and beyond.

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MR256D08B Dual Supply 32K x 8 MRAM FEATURES +3.3 Volt power supply I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces Fast 45 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20-years at temperature RoHS-compliant small footprint BGA package BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs RoHS Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR256D08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR256D08B is available in small footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. The MR256D08B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 C). CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 2 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 8 4. ORDERING INFORMATION....................................................................... 13 5. MECHANICAL DRAWING.......................................................................... 14 6. REVISION HISTORY...................................................................................... 15 How to Reach Us.......................................................................................... 15 Copyright 2018 Everspin Technologies, Inc. 1 MR256D08B Rev. 3.3 3/2018MR256D08B 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram OUTPUT G ENABLE OUTPUT ENABLE BUFFER 7 A 14:0 ADDRESS ROW BUFFER 8 COLUMN 15 DECODER DECODER CHIP E 8 8 8 OUTPUT ENABLE SENSE BUFFER BUFFER AMPS 32K x 8 BIT MEMORY WRITE W ARRAY ENABLE FINAL BUFFER 8 8 WRITE 8 WRITE DQ 7:0 DRIVER DRIVERS WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable DQ Data I/O V Power Supply DD V I/O Power Supply DDQ V Ground SS DC Do Not Connect NC No Connection, Ball D3, H1, H6, G2 Reserved for Future Expansion Copyright 2018 Everspin Technologies, Inc. 2 MR256D08B Rev. 3.3 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)

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