X-On Electronics has gained recognition as a prominent supplier of MR4A08BCYS35 mram across the USA, India, Europe, Australia, and various other global locations. MR4A08BCYS35 mram are a product manufactured by Everspin. We provide cost-effective solutions for mram, ensuring timely deliveries around the world.

MR4A08BCYS35

MR4A08BCYS35 electronic component of Everspin
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See Product Specifications
Part No.MR4A08BCYS35
Manufacturer: Everspin
Category:MRAM
Description: Memory; MRAM; parallel 8bit; 2Mx8bit; 16Mbit; 35ns; TSOP44 II
Datasheet: MR4A08BCYS35 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 58.9529 ea
Line Total: USD 58.95

Availability - 1013
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1006 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 57.1389
10 : USD 53.5768
25 : USD 50.389
50 : USD 50.3769
100 : USD 46.4283
270 : USD 46.4283
540 : USD 45.8971
1080 : USD 44.6292

     
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We proudly offer the MR4A08BCYS35 MRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the MR4A08BCYS35 MRAM.

MR4A08B 2M x 8 MRAM Memory FEATURES +3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20-years at temperature RoHS-compliant small footprint BGA and TSOP2 packages All products meet MSL-3 moisture sensitivity level BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR4A08B is a 16,777,216-bit magnetoresistive random access RoHS memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low- voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 10 mm x 10 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are com- patible with similar low-power SRAM products and other non-volatile RAM products. The MR4A08B provides highly reliable data storage over a wide range of temperatures. The product is of- fered with commercial (0 to +70 C) and industrial (-40 to +85 C) operating temperature range options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 2 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION....................................................................... 11 5. MECHANICAL DRAWING.......................................................................... 12 6. REVISION HISTORY...................................................................................... 14 How to Reach Us.......................................................................................... 15 Copyright 2018 Everspin Technologies 1 MR4A08B Rev. 8.7 3/2018MR4A08B 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram OUTPUT G ENABLE OUTPUT ENABLE BUFFER 10 A 20:0 ADDRESS ROW BUFFER 11 COLUMN 21 DECODER DECODER CHIP E 8 OUTPUT 8 8 ENABLE SENSE BUFFER BUFFER AMPS 2M x 8 BIT MEMORY WRITE W ARRAY ENABLE FINAL BUFFER 8 8 WRITE 8 WRITE DQ 7:0 DRIVER DRIVERS WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable DQ Data I/O V Power Supply DD V Ground SS DC Do Not Connect NC No Connection Copyright 2018 Everspin Technologies 2 MR4A08B Rev. 8 .7 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Everspin Tech
Everspin Technologies

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