X-On Electronics has gained recognition as a prominent supplier of FHU4N60E MOSFETs across the USA, India, Europe, Australia, and various other global locations. FHU4N60E MOSFETs are a product manufactured by FeiHong. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FHU4N60E FeiHong

Name: FHU4N60E
Brand: FeiHong
SKU: FHU4N60E_FeiHong
Availability: OutOfStock
Rating: 5 (11 reviews)

FHU4N60E electronic component of FeiHong

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See Product Specifications

Part No.	FHU4N60E
Manufacturer:	FeiHong
Category:	MOSFETs
Description:	650V 4A 2.4O@10V,2A 25W N Channel TO-251 MOSFETs ROHS
Datasheet:	FHU4N60E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.342 ea
Line Total: USD 0.34

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

FHU4N60E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 12 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 0.342 10 : USD 0.283 30 : USD 0.2403 100 : USD 0.205 500 : USD 0.1989 1000 : USD 0.1961

Specifications

Manufacturer FeiHong FeiHong
Product Category MOSFETs MOSFETs
Brand Feihong Feihong
Rohs Y Y
Package TO - 251 TO - 251
Fet Type NChannel NChannel
Drain To Source Voltagevdss 650 V 650 V
Continuous Drain Current Id @ 25°C 4 A (T C) 4 A (T C)
Vgsth Max @ Id 4V @ 250uA 4V @ 250uA
Rds On Max @ Id Vgs 2.4O @ 2A,10V 2.4O @ 2A,10V
Power Dissipation-Max Ta 25°C 25 W (Tc) 25 W (Tc)
Drain Source Voltage Vdss 650 V 650 V
Continuous Drain Current Id 4 A 4 A
Drain Source On Resistance Rdson@Vgs Id 2.4 Ohms @10V , 2A 2.4 Ohms @10V , 2A
Power Dissipation Pd 25 W 25 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the FHU4N60E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FHU4N60E and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The FHU4N60E is a 650V 4A 2.4O@10V,2A 25W N Channel TO-251 MOSFET manufactured by FeiHong. It is RoHS compliant and is a N-channel, insulated-gate field-effect transistor with a maximum thermal resistance of 25W and a maximum drain-source breakdown voltage of 650V. It has an integral temperature protection diode, two gate terminals (Vgs and Vgs), and three drain terminals (Drain, Drain2, and Drain3). The FHU4N60E offers high current switching capabilities at low on-state resistance and a quiescent current of 2A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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