N-CHANNEL ENHANCEMENT
ZVN4206A
MODE VERTICAL DMOS FET
ISSUE 2 JUNE 94
FEATURES
* 60 Volt V
DS
*R =1
DS(on)
D
G
S
E-LINE
TO92 COMPATIBLE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V 60 V
DS
Continuous Drain Current at T =25C I 600 mA
amb D
Pulsed Drain Current I 8A
DM
Gate-Source Voltage V 20 V
GS
Power Dissipation at T =25C P 0.7 W
amb tot
Operating and Storage Temperature Range T :T -55 to +150 C
j stg
ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown BV 60 V I =1mA, V =0V
DSS D GS
Voltage
Gate-Source Threshold V 1.3 3 V ID=1mA, V =V
GS(th) DS GS
Voltage
Gate-Body Leakage I 100 nA V = 20V, V =0V
GSS GS DS
Zero Gate Voltage Drain I 10 A V =60V, V =0
DSS DS GS
Current 100 V =48V, V =0V, T=125C(2)
A
DS GS
On-State Drain Current(1) I 3AV =25V, V =10V
D(on) DS GS
Static Drain-Source On-State R 1 V =10V,I =1.5A
DS(on) GS D
Resistance (1) 1.5 V =5V,I =500mA
GS D
Forward Transconductance(1)(2g 300 mS V =25V,I =1.5A
fs DS D
)
Input Capacitance (2) C 100 pF
iss
Common Source Output C 60 pF V =25V, V =0V, f=1MHz
oss DS GS
Capacitance (2)
Reverse Transfer Capacitance C 20 pF
rss
(2)
Turn-On Delay Time (2)(3) t 8ns
d(on)
Rise Time (2)(3) t 12 ns
r
V 25V, I =1.5A
DD D
Turn-Off Delay Time (2)(3) t 12 ns
d(off)
Fall Time (2)(3) t 15 ns
f
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generatorGS(TH)
Gate Threshold Voltage V
ZVN4206A
TYPICAL CHARACTERISTICS
10 10 VGS=
VGS=
20V
20V
16V
16V
8
8
14V
14V
12V
12V
6 6
10V
10V
9V
9V
8V 8V
4 4
7V
7V
6V 6V
2
2
5V
5V
4.5V
4.5V
4V
4V
0 0
3.5V 3.5V
24 6 8 10
010 20 30 40 50
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
10
6
8
VDS=10V
6
4
4
2
ID=
2 3A
1.5A
0.5A
0
0
0 2 4 6810
02 4 6 8 10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
4.5V 8V
VGS=3.5V 6V 10V
2.6
10
2.4
VGS=10V
ID=1.5A
2.2
2.0
1.8
14V
1.0 1.6
1.4
20V
1.2
VGS=VDS
ID=1mA
1.0
0.8
0.6
0.1
-50 -25 0 25 50 75 100 125 150 175 200 225
10
0.1 1.0
Tj-Junction Temperature (C)
ID-Drain Current (Amps)
DS(on) GS(th)
On-resistance v drain current Normalised R and V v Temperature
3-382
urce Resis c )
Drain-So tan e RDS(on
()
RDS(on)-Drain Source On Resistance VDS-Drain Source Voltage (Volts)
ID - Drain Current (Amps)
Normalised RDS(on) and VGS(th)
i urrent (Amps)
ID - Dra n C
ID - Drain Current (Amps)