AD1500-10-TO5I First Sensor

First Sensor APD Data Sheet Part Description AD1500-10 TO Order 500883 Version 09-10-15 Features Description Application RoHS 1500 m active area Pulsed 1064 nm laser detection 2011/65/EU Circular active area APD chip with IR High QE for = 850-1064 nm Laser range finding enhanced sensitivity. Very low dark Low noise current due to guard ring diode. Fluorescence detection Low slope multiplication curve Metal can type hermetic TO5i package with clear glass window. Absolute maximum ratings Spectral response (M = 100 23 C) Symbol Parameter Min Max Unit 70 T Storage temp -55 125 C STG 60 T Operating temp -40* C 100 OP 50 M Gain (I = 1 nA) 1000 max P0 I Peak DC current mA 0.25 PEAK 40 30 Schematic 20 PIN 2 PIN 1 10 PIN 3 GR 0 500 600 700 800 900 1000 1100 Wavelength (nm) PIN 4 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit 1500 m Active area 1.77 mm Active area I 7 90 nA Dark current M = 100 D C Capacitance M = 100 3 pF 59 A/W Responsivity M = 100 = 905 nm 49 A/W Responsivity M = 100 = 1064 nm t 5 ns Rise time M = 100 = 1064 nm R = 50 R L t 70 MHz Cut-off frequency -3dB R V 300 V Breakdown voltage I = 2 A 220 600 BR R 3.3 V/K Temperature coefficient FOV Field of view 50 * please note that depending on operation voltage APD operation at temperatures below -15C may require sophisticated control circuit. European, International Sales: First Sensor AG First Sensor Inc. USA: Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Responsivity (A/W) First Sensor APD Data Sheet First Sensor APD Data Sheet Part Description AD1500-10 TO Part Description AD1500-10 TO Order 500883 Order 500883 Version 09-10-15 Version 09-10-15 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100 70 60 80 50 60 40 30 40 20 20 10 0 0 500 600 700 800 900 1000 1100 0 20 40 60 80 100 Reverse bias (V) Wavelength (nm) Multiplication as fct of reverse bias Dark current as fct of reverse bias 1000 10E-08 01E-08 100 1,000E-12 23C 23C 10 100E-12 40C 40C 60C 60C 1 10E-12 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 Reverse bias (V) Reverse bias (V) Application hints: Current should be limited by a protecting resistor or current limiting - IC inside the power supply Guard ring should be connected to ground For low light level applications blocking of ambient light should be used For high gain applications bias voltage should be temperature compensated Please consider basic ESD protection while handling Use low noise read-out - IC For further questions please refer to documentInstructions for handling and processin and application notes for APDs and APD-Arrays Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. European, International Sales: First Sensor AG First Sensor Inc. USA: Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Multiplication Quantum efficiency (%) Capacitance (pF) Dark current per element (A)