First Sensor APD Data Sheet Part Description AD1500-9 TO Order 501208 Version 20-06-11 Features Description Application RoHS APD with 1.77 mm active area Laser range finder 2002/95/EC Circular active area APD chip with Slow multiplication curve NIR enhanced sensitivity. Very low High speed photometry QE > 80% 750 nm-910 nm dark current due to guard ring High speed optical diode. Metal can type hermetic TO5i Very low noise communications Optimum gain: 50-60 package with clear glass window. Medical equipment Absolute maximum ratings Spectral response (M = 100) Symbol Parameter Min Max Unit 70 T Storage temp -55 125 C STG 60 Operating temp -40 C T 100 OP 50 M Gain (I = 1 nA) 200 max P0 I Peak DC current 0.25 mA PEAK 40 30 Schematic 20 PIN 2 PIN 1 10 PIN 3 GR 0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) PIN 4 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit Active area diameter 1500 m Active area 1.77 mm I 2 10 nA Dark current M = 100 D C Capacitance M = 100 4 pF 52 58 60 A/W Responsivity M = 100 = 905 nm t Rise time 2 ns R M = 100 = 905 nm R = 50 L 0.2 GHz Cut-off frequency -3dB V Breakdown voltage 160 240 V BR I = 2 A, V - binning available R BR 1.25 1.55 V/K Temperature coefficiant Change of V with temperature BR Excess noise factor M = 100 2.5 0.2 Excess noise index M = 100 European, International Sales: First Sensor AG USA: First Sensor Inc. Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Responsivity (A/W)First Sensor APD Data Sheet First Sensor APD Data Sheet Part Description AD1500-9 TO Part Description AD1500-9 TO Order 501208 Order 501208 Version 20-06-11 Version 20-06-11 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100,0 200 80,0 60,0 100 40,0 20,0 0,0 0 400 450 500 550 600 650 700 750 800 850 900 950 100010501100 0 10 20 30 40 50 60 70 80 90 100 Reverse bias (V) Wavelength (nm) Multiplication as fct of bias and temperature Dark current as fct of bias and temperature 1.000 1,0E-06 23C 23C 1,0E-07 40C 40C 100 60C 60C 1,0E-08 1,0E-09 10 1,0E-10 1 1,0E-11 20 40 60 80 100 120 140 160 180 200 220 240 260 20 40 60 80 100 120 140 160 180 200 220 240 260 Reverse bias (V) Reverse bias (V) Application hints: Bias supply voltage Current should be limited by a protecting resistor or current limiting - IC Current limiting resistor inside the power supply For low light level applications blocking of ambient light should be used For high gain applications bias voltage should be temperature compensated min. 0,1 F, Please consider basic ESD protection while handling closest to APD APD Use low noise read-out - IC For further questions please refer to documentInstructions for handling and processin Optimum gain: 50-60 Diode, protective circuit Read-out circuit or f.e. 50 Load resistance Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. European, International Sales: First Sensor AG USA: First Sensor Inc. Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Multiplication Quantum efficiency (%) Dark current (A) Capacitance (pF)