T N A I L P M O C First Sensor APD Hybrid Series Data Sheet Part Description AD500-9-400M-TO5 US Order 05-051 International Order 500490 PIN 5 2.2 CASE/ GND PIN 1 0.46 V out+ 5 PL 9.2 PIN 2 6.60 113 VCC VIEWING 8.3 ANGLE PIN 4 5.08 V out- PIN CIRCLE 4.2 1 PIN 3 7.6 MIN +V BIAS 5 PL 1.00 SQ BACKSIDE VIEW 2 ACTIVE AREA: 0.196 mm (500 m DIAMETER) CHIP DIMENSIONS FEATURES DESCRIPTION APPLICATIONS 0.500 mm active area The AD500-9-400M-TO5 is an Avalanche Photodiode Amplifier Precision photometry 2 Hybrid containing a 0.196 mm active area APD chip integrated Low noise Analytical instruments with an internal transimpedance amplifier. Hermetically High gain Medical equipment packaged in a TO-5 with a borosilicate glass window cap. Low light sensor Long term stability ABSOLUTE MAXIMUM RATING SPECTRAL RESPONSE at M = 100 SYMBOL PARAMETER MIN MAX UNITS T Storage Temp -55 +125 C STG T Operating Temp 0 +60 OP C 70 T Soldering Temp - +240 C SOLDERING 60 P Power Dissipation - 360 mW 50 V Single Supply Voltage +3.0 +5.5 V cc 40 I Supply Current - 63 mA cc 30 SCHEMATIC 20 V (+5V) CC PIN 2 10 C1 OUT+ 0 PIN 1 400 500 600 700 800 900 1000 1100 AD500-9 OUT- PIN 4 PIN 5 WAVELENGTH (nm) C2 CASE/GND PIN 3 +V BIAS ELECTRO-OPTICAL CHARACTERISTICS 22 C (V = single supply +3.3V, R = 100W unless otherwise specified) CC L SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS Frequency Response -3dB 905 nm --- 400 --- MHz -3dB S Sensitivity* --- 100 --- KV/W = 905 nm M = 100 I Supply Current Dark state --- 34 63 mA cc * Sensitivity = APD responsivity (0.45 A/W X 100 gain) x TIA gain (2.5K) These devices are sensitive to electrostatic discharge. Please use ESD precautions when handling. Disclaimer: Due to our policy of continued development, specifications are subject to change without notice. 10/8/2013 S H o R RESPONSIVITY (A/W) AVALANCHE PHOTODIODE DATA 22 C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS I Dark Current M = 100 (see note 2) --- 0.5 5.0 nA D C Capacitance M = 100 (see note 2) --- 1.2 --- pF V Breakdown Voltage (see note 1) I = 2 A 160 240 --- V BR D Temperature Coefficient of V --- 1.55 --- V/K BR Responsivity M = 100 = 0 V = 905 nm 55 60 --- A/W Bandwidth -3dB --- 0.5 --- GHz 3dB Rise Time M = 100 --- 550 --- ps t r Optimum Gain 50 60 --- --- --- Excess Noise factor M = 100 2.5 --- --- Excess Noise index M = 100 0.2 1/2 --- --- Noise Current M = 100 1.0 pA/Hz Max Gain 200 --- --- -14 1/2 --- --- NEP Noise Equivalent Power M = 100 = 905 nm 2.0 X 10 W/Hz Note 1: The following different breakdown voltage ranges are available: (160 200 V), (200 240 V). Note 2: Measurement conditions: Setup of photo current 1 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage. TRANSIMPEDANCE AMPLIFIER DATA 25 C (Vcc = +3.0 V to 5.5 V, TA = 0C to 70C, 100 load between OUT+ and OUT-. Typical values are at TA = 25C, Vcc = +3.3 V) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Supply Voltage 3 5 5.5 V Supply Current --- 34 63 mA 2.10 3.40 Transimpedance Differential, measured with 40 A p-p signal 2.75 k 48 52 Output impedance Single ended per side 50 Maximum Differential Output Voltage Input = 2 mA p-p with 100 differential termination 220 380 575 mV p-p AC Input Overload 2 --- --- mA p-p DC Input Overload 1 --- --- mA Input Referred RMS Noise TO-5 package, see note 4 --- 490 668 nA 1/2 --- --- Input Referred Noise Density See note 4 11 pA/Hz --- Small signal bandwidth Source capacitance = 0.85 pF, see note 3 1.525 2.00 GHz --- --- Low Frequency Cutoff -3 dB, input < 20 A DC 30 kHz --- Transimpedance Linear Range Peak to peak 0.95 < linearity < 1.05 40 --- A p-p Power Supply Rejection Ratio Output referred, f < 2 MHz, PSSR = -20 Log (Vout / --- --- 50 dB (PSRR) Vcc) Note 3: Source capacitance for AD500-9-400M-TO5 is the capacitance of APD. Note 4: Input referred noise is calculated as RMS output noise/ (gain at f = 10 Mhz). Noise density is (input referred noise)/bandwidth. TRANSFER CHARACTERISTICS The circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. The output of the APD (light generated current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal. The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as 2 2 Amps/mm /Watts/mm , where the numerator applies to the current generated divided by the area of the detector, the denominator refers to the power of the radiant energy present per unit area. As an example assume a radiant input of 1 microwatt at 850 nm. The APDs corresponding responsivity is 0.4 A/W. -6 If energy in = 1 W, then the current from the APD = (0.4 A/W) x (1 x 10 W) = 0.4 A. We can then factor in the typical gain of the APD of 100, making the input current to the amplifier 40 A. From Fig. 5 we can see the amplifier output will be approximately 75 mV p-p. APPLICATION NOTES The AD500-9-400M-TO5 is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche photodiode. This detector requires +3.5 V to +5.0 V voltage supply for the amplifier and a high voltage supply (100-240 V) for the APD. The internal APD follows the gain curve published for the AD500-9-TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output signals in the range of 200 millivolts differential. In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. Failure to limit this current may result in permanent failure of the device. The suggested initial value for this limiting resistor is 390 KOhm. When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency response. This includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise. 10/8/2013