X-On Electronics has gained recognition as a prominent supplier of AD800-10-TO5I Photodiodes across the USA, India, Europe, Australia, and various other global locations. AD800-10-TO5I Photodiodes are a product manufactured by First Sensor. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

AD800-10-TO5I First Sensor

AD800-10-TO5I electronic component of First Sensor
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Part No.AD800-10-TO5I
Manufacturer: First Sensor
Category: Photodiodes
Description: Photodiodes 800um active area APD chip w/ IR
Datasheet: AD800-10-TO5I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 179.2908
5 : USD 164.6568
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Dark Current
Vr - Reverse Voltage
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We are delighted to provide the AD800-10-TO5I from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AD800-10-TO5I and other electronic components in the Photodiodes category and beyond.

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First Sensor APD Data Sheet Part Description AD800-10 TO Order 501233 Version 02-07-12 Features Description Application RoHS 800 m active area Pulsed 1064 nm laser detection 2002/95/EC Circular active area APD chip with IR High QE for = 850-1064 nm Laser range finding enhanced sensitivity. Very low dark Low noise Fluorescence detection current due to guard ring diode. Low slope multiplication curve Metal can type hermetic TO5i package with clear glass window. Absolute maximum ratings Spectral response (M = 100 23 C) Symbol Parameter Min Max Unit 8800 Storage temp -55 C T 125 STG 7700 Operating temp Operating temp -40* -40* 100100 CC TT OPOP 6600 M Gain (I = 1 nA) 1000 max P0 50 I Peak DC current 0.25 mA PEAK 40 Schematic 30 PIN 2 PIN 1 20 10 PIN 3 GR 0 500 600 700 800 900 1000 1100 Wavelength (nm) PIN 4 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit 800 m Active area Active area 0.5 mm I 3 25 nA Dark current M = 100 D C Capacitance M = 100 1 pF 65 A/W Responsivity M = 100 = 905 nm Responsivity 36 A/W M = 100 = 1064 nm t 5 ns Rise time R M = 100 = 1064 nm R = 50 L t Cut-off frequency -3dB 70 MHz R V 300 V Breakdown voltage 220 600 BR I = 2 A R 3.3 V/K Temperature coefficient * please note that depending on operation voltage APD operation at temperatures below -15C may require sophisticated control circuit. European, International Sales: First Sensor AG First Sensor Inc. USA: Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.comsales.opto first-sensor.com sales.us first-sensor.comsales.us first-sensor.com Responsivity (A/W)First Sensor APD Data Sheet Part Description AD800-10 TO Order 501233 Version 02-07-12 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 110000 2200 1188 8800 1166 1144 6600 1122 1100 4400 88 66 2200 44 22 00 00 550000 660000 770000 880000 990000 11000000 11110000 00 2200 4400 6600 8800 110000 RReeveverrsese bbiiaas s ((VV)) WWaavevelleennggtthh ((nnmm)) Multiplication as fct of reverse bias Dark current as fct of reverse bias 11000000 11,,00EE--0077 11,,00EE--0088 110000 11,,00EE--0099 2233CC 2233CC 1100 11,,00EE--1100 4400CC 4400CC 60C 60C 1 1,0E-11 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 Reverse bias (V) Reverse bias (V) Application hints: Current should be limited by a protecting resistor or current limiting - IC inside the power supply Guard ring should be connected to ground For low light level applications blocking of ambient light should be used For high gain applications bias voltage should be temperature compensated Please consider basic ESD protection while handling Use low noise read-out - IC For further questions please refer to documentInstructions for handling and processin and application notes for APDs and APD-Arrays Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. European, International Sales: First Sensor AG First Sensor Inc. USA: Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.comsales.opto first-sensor.com sales.us first-sensor.comsales.us first-sensor.com MMuullttiipplliicacattiioonn QQuuaannttuumm eeffffiicicieenncycy ((%%)) CCaappaacicittaanncece ((ppFF)) DDaarrkk cucurrrreenntt ppeerr eelleemmeenntt ((AA))

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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