First Sensor APD Data Sheet Part Description AD800-8 TO Order 500947 Version 20-06-11 Features Description Application RoHS APD with 0.5 mm active area Laser range finder 2002/95/EC Circular active area APD chip with 800 m diameter active area 800 m diameter. Metal can type High speed photometry High gain at low bias voltage hermetic TO52 package with clear High speed optical glass window. Fast rise time, low capacitance communications Optimum gain: 50-60 Medical equipment Absolute maximum ratings Spectral response (M = 100) Symbol Parameter Min Max Unit 60 T Storage temp -55 125 C STG 50 Operating temp -40 C T 100 OP M Gain (I = 1 nA) 200 max P0 40 I Peak DC current 0.25 mA PEAK 30 Schematic 20 PIN 1 10 PIN 4 0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) PIN 3 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit Active area diameter 800 m Active area 0.5 mm I 2.0 6.0 nA Dark current M = 100 D C Capacitance M = 100 5.0 pF 45 50 A/W Responsivity M = 100 = 800 nm t Rise time 0.7 ns R M = 100 = 905 nm R = 50 L 0.5 GHz Cut-off frequency -3dB V Breakdown voltage 80 150 240 V BR I = 2 A, V - binning available R BR 0.45 V/K Temperature coefficiant Change of V with temperature BR Excess noise factor M = 100 2.2 0.2 Excess noise index M = 100 European, International Sales: First Sensor AG USA: First Sensor Inc. Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Responsivity (A/W)First Sensor APD Data Sheet First Sensor APD Data Sheet Part Description AD800-8 TO Part Description AD800-8 TO Order 500947 Order 500947 Version 20-06-11 Version 20-06-11 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100,0 100 90 80,0 80 70 60,0 60 50 40,0 40 30 20,0 20 10 0,0 0 400 450 500 550 600 650 700 750 800 850 900 950 100010501100 0 10 20 30 40 50 60 Reverse bias (V) Wavelength (nm) Multiplication as fct of bias (23 C) Dark current as fct of bias (23 C) 1.000 1,0E-08 100 1,0E-09 10 1,0E-10 1 1,0E-11 20 30 40 50 60 70 80 90 100 110 120 130 140 150 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Reverse bias (V) Reverse bias (V) Application hints: Bias supply voltage Current should be limited by a protecting resistor or current limiting - IC inside the power supply Current limiting resistor For low light level applications blocking of ambient light should be used For high gain applications bias voltage should be temperature compensated Please consider basic ESD protection while handling min. 0,1 F, Use low noise read-out - IC closest to APD APD For further questions please refer to documentInstructions for handling and processin Optimum gain: 50-60 Diode, protective circuit Read-out circuit or f.e. 50 Load resistance Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. European, International Sales: First Sensor AG USA: First Sensor Inc. Peter-Behrens-Strasse 15 5700 Corsa Avenue 105 12459 Berlin Westlake Village Germany CA 91362 USA T +49 30 6399 2399 T +1 818 706 3400 F +49 30 639923-752 F +1 818 889 7053 sales.opto first-sensor.com sales.us first-sensor.com Multiplication Quantum efficiency (%) Dark current (A) Capacitance (pF)