X-On Electronics has gained recognition as a prominent supplier of QP50-6-42U-TO8S-H Photodiodes across the USA, India, Europe, Australia, and various other global locations. QP50-6-42U-TO8S-H Photodiodes are a product manufactured by First Sensor. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

QP50-6-42U-TO8S-H First Sensor

QP50-6-42U-TO8S-H electronic component of First Sensor
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Part No.QP50-6-42U-TO8S-H
Manufacturer: First Sensor
Category: Photodiodes
Description: Photodiodes Quadrant 4 X 12mm 42um element gap
Datasheet: QP50-6-42U-TO8S-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 143.506 ea
Line Total: USD 143506 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 143.506

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Package / Case
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Noise Equivalent Power - Nep
Responsivity
Factory Pack Quantity :
Height
Type
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the QP50-6-42U-TO8S-H from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QP50-6-42U-TO8S-H and other electronic components in the Photodiodes category and beyond.

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First Sensor QP Data Sheet Part Description QP50-6 TO Order 3004334 Features Description Application RoHS 50 mm Quadrant PIN detector Laser beam position sensor 2011/65/EU Low dark current quadrant PIN photodiode with 4 x 12 mm active Autocollimators High sensitivity area. Metal can type hermetic TO8S Low dark current Optical tweezers package with clear glass window. Ellipsometers Absolute maximum ratings Spectral response (23 C) Symbol Parameter Min Max Unit 0,7 T Storage temp -55 C 125 STG 0,6 T Operating temp -40 100 C OP 0,5 V Max reverse voltage 20 V max I Peak DC current mA PEAK 10 0,4 0,3 Schematic 0,2 0,1 0,0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit Number of elements 4 quadrants Active area diameter 7980 (total) m 12 mm Active area per element Gap between elements 42 m I V = 10 V per element 2.0 5.0 nA Dark current D R C Capacitance V = 0 V per element 120 pF R V = 10 V per element 20 pF R 0.4 A/W Responsivity = 632 nm = 900 nm 0.64 A/W t V = 0 V = 850 nm R = 50 2000 ns Rise time R R L V = 10 V = 850 nm R = 50 40 ns R L Shunt Resistance V = 5 mV per element 50 M R V = 5 V = 900 nm per element 4 E-14 W/Hz N.E.P. R V Breakdown voltage I = 2 A 20 50 V BR R Rev. 21/06/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/2 Responsivity (A/W)First Sensor QP Data Sheet First Sensor QP Data Sheet Part Description QP50-6 TO Part Description QP50-6 TO Order 3004334 Order 3004334 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C per element) 100 50 45 80 40 35 60 30 25 40 20 15 20 10 5 0 0 400 450 500 550 600 650 700 750 800 850 900 950 100010501100 0 10 20 30 40 50 Reverse bias (V) Wavelength (nm) Dark current as fct of bias (23 C per element) 1,0E-08 1,0E-09 1,0E-10 0 5 10 15 20 25 30 Reverse bias V Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Handling precautions: Soldering temperature max. 260 C for 10 s. The device must be protected against solder flux vapour. Minimum pin length is 2 mm. For ESD protection standard precautionary measures are sufficient. For further questions please refer to documentInstructions for handling and processin. Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. Rev. 21/06/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/2 Dark current (A) Quantum efficiency (%) Capacitance (pF)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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