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X-On Electronics has gained recognition as a prominent supplier of 2N7002HG MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002HG MOSFETs are a product manufactured by Galaxy. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002HG Galaxy

2N7002HG electronic component of Galaxy
2N7002HG Galaxy
2N7002HG MOSFETs
2N7002HG  Semiconductors

Images are for reference only
See Product Specifications
Part No. 2N7002HG
Manufacturer: Galaxy
Category: MOSFETs
Description: MOSFET N Trench 60V 300mA 2.5V @ 250uA 3 Ω @ 50mA,5V SOT-23 RoHS
Datasheet: 2N7002HG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
 
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We are delighted to provide the 2N7002HG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002HG and other electronic components in the MOSFETs category and beyond.

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The 2N7002HG with MOSFET N Trench is a semiconductor device manufactured by Galaxy. It is a dual N-channel MOSFET (Metal Oxide Semi-conductor Field Effect Transistor) featuring a drain-to-source voltage of 60V, an on-state drain current of 300mA (at a VGS of 2.5V) and an RDSon of 3 O (at a VGS of 5V). This switch has a SOT-23 (small outline transistor) package. RoHS (Restriction on Hazardous Substances) compliant, it is designed for use in a wide range of general-purpose applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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