GS61008P-MR Gan Systems

GS61008P Bottom-side cooled 100 V E-mode GaN transistor Datasheet Features 100 V enhancement mode power transistor Bottom-side cooled configuration R = 7 m DS(on) I = 90 A DS(max) Package Outline Circuit Symbol Ultra-low FOM die Low inductance GaNPX package Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 7.6 x 4.6 mm PCB footprint Source Sense (SS) pin for optimized gate drive The thermal pad (pad 5) must be RoHS 3 (6 + 4) compliant connected to Source, S (pad 4) Applications Description Energy Storage Systems The GS61008P is an enhancement mode GaN-on-silicon AC-DC Converters (secondary side) power transistor. The properties of GaN allow for high Uninterruptable Power Supplies current, high voltage breakdown and high switching Industrial Motor Drives frequency. GaN Systems innovates with industry Fast Battery Charging Class D Audio amplifiers leading advancements such as patented Island Traction Drive Technology and GaNPX packaging. Island Robotics Technology cell layout realizes high-current die and Wireless Power Transfer high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS61008P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 200402 2009-2020 GaN Systems Inc. 1 Submit Datasheet Feedback GS61008P Bottom-side cooled 100 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (Tcase = 25 C except as noted) Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 100 V DS Drain-to-Source Voltage - transient (Note 1) V 120 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 90 A case DS Continuous Drain Current (T = 100 C) I 65 A case DS Pulse Drain Current (Pulse width 50 s, VGS = 6 V) (Note 2) I 140 A DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 0.55 C /W JC Thermal Resistance (junction-to-ambient) (Note 3) R 23 C /W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm 2 pitch (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Ordering Packing Reel Reel Package type Qty code method Diameter Width GS61008P-TR GaNPX bottom cooled Tape-and-Reel 3000 13 (330mm) 16mm GS61008P-MR GaNPX bottom cooled Mini-Reel 250 7 (180mm) 16mm Rev 200402 2009-2020 GaN Systems Inc. 2 Submit Datasheet Feedback