GS61008T-MR Gan Systems

GS61008T Top-side cooled 100 V E-mode GaN transistor Datasheet Features 100 V enhancement mode power transistor Top-side cooled configuration R = 7 m DS(on) I = 90 A DS(max) Ultra-low FOM die Low inductance GaNPX package Package Outline Circuit Symbol Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 7.0 x 4.0 mm PCB footprint Dual gate pads for optimal board layout RoHS 3 (6 + 4) compliant The top-side thermal pad is internally connected to Source (S pin 3) and substrate Applications Description Energy Storage Systems The GS61008T is an enhancement mode GaN-on- AC-DC Converters (secondary side) silicon power transistor. The properties of GaN allow Uninterruptable Power Supplies for high current, high voltage breakdown and high Industrial Motor Drives switching frequency. GaN Systems innovates with Fast Battery Charging industry leading advancements such as patented Class D Audio amplifiers Traction Drive Island Technology and GaNPX packaging. Island Robotics Technology cell layout realizes high-current die and Wireless Power Transfer high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS61008T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 200402 2009-2020 GaN Systems Inc. 1 Submit Datasheet Feedback GS61008T Top-side cooled 100 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (T = 25 C except as noted) case Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 100 V DS Drain-to-Source Voltage - transient (Note 1) V 120 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 90 A case DS Continuous Drain Current (T = 100 C) I 65 A case DS Pulse Drain Current (Pulse width 50 s, V = 6 V) (Note 2) I 140 A GS DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) Top side R 0.55 C /W JC Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD Ordering Information Ordering Packing Reel Reel Package type Qty code method Diameter Width GS61008T-TR GaNPX Top-Side Cooled Tape-and-Reel 3000 13 (330 mm) 16 mm GS61008T-MR GaNPX Top-Side Cooled Mini-Reel 250 7 (178 mm) 16 mm Rev 200402 2009-2020 GaN Systems Inc. 2 Submit Datasheet Feedback