TM G2R120MT33J 3300 V 120 m SiC MOSFET Silicon Carbide MOSFET VDS = 3300 V N-Channel Enhancement Mode DS(ON)(Typ.) R = 120 m ID (TC = 100C) = 24 A Features Package D Softer R v/s Temperature Dependency DS(ON) LoRing - Electromagnetically Optimized Design Smaller R and Lower Q G(INT) G G RoHS Low Device Capacitances (COSS, CRSS) KS Industry-Leading UIL & Short-Circuit Robustness S Robust Body Diode with Low V and Low Q F RR D = Drain Normally Off-Stable Temperature up to 175C G = Gate TO-263-7 Optimized Package with Separate Driver Source Pin S = Source REACH KS = Kelvin Source Advantages Applications Compatible with Commercial Gate Drivers Solar String Inverters Low Conduction Losses at all Temperatures EV- Fast Chargers Reduced Ringing Pulsed Power Faster and More Efficient Switching Switched Mode Power Supply Lesser Switching Spikes and Lower Losses Energy Storage Better Power Density and System Efficiency Solid State Transformers Ease of Paralleling without Thermal Runaway Solid State Circuit Breakers Superior Robustness and System Reliability Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Drain-Source Voltage V V = 0 V, I = 100 A 3300 V DS(max) GS D Gate-Source Voltage (Dynamic) VGS(max) -10 / +25 V Gate-Source Voltage (Static) V Recommended Operation -5 / +20 V GS(op) T = 25C, V = -5 / +20 V 33 C GS Continuous Forward Current ID TC = 100C, VGS = -5 / +20 V 24 A Fig. 15 TC = 135C, VGS = -5 / +20 V 17 Pulsed Drain Current I t 3s, D 1%, V = 20 V, Note 1 100 A Fig. 14 D(pulse) P GS Power Dissipation P T = 25C 366 W Fig. 16 D c Non-Repetitive Avalanche Energy EAS L = 34.0 mH, IAS = 7.5 A 955 mJ Operating and Storage Temperature T , T -55 to 175 C j stg Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.34 0.41 C/W Fig. 13 thJC Weight WT 1.45 g Note 1: Pulse Width t Limited by T P j(max) Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33J/G2R120MT33J.pdf Page 1 of 14TM G2R120MT33J 3300 V 120 m SiC MOSFET Electrical Characteristics (At T = 25C Unless Otherwise Stated) C Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I = 100 A 3300 V DSS GS D Zero Gate Voltage Drain Current I V = 3300 V, V = 0 V 1 A DSS DS GS V = 0 V, V = 25 V 100 DS GS Gate Source Leakage Current IGSS nA V = 0 V, V = -10 V -100 DS GS VDS = VGS, ID = 4.0 mA 2.5 3.50 Gate Threshold Voltage V V Fig. 9 GS(th) VDS = VGS, ID = 4.0 mA, Tj = 175C 2.40 V = 10 V, I = 15 A 6.0 DS D Transconductance g S Fig. 4 fs V = 10 V, I = 15 A, T = 175C 6.5 DS D j V = 20 V, I = 15 A 120 156 GS D Drain-Source On-State Resistance R m Fig. 5-8 DS(ON) V = 20 V, I = 15 A, T = 175C 251 GS D j Input Capacitance Ciss 3099 Output Capacitance C 55 pF Fig. 11 oss Reverse Transfer Capacitance C 5.2 rss Coss Stored Energy Eoss 36 J Fig. 12 V = 1000 V, V = 0 V DS GS C Stored Charge Q 108 nC oss oss f = 1 MHz, VAC = 25mV Effective Output Capacitance (Energy Co(er) 72 Related) pF Note 2 Effective Output Capacitance (Time Co(tr) 108 Related) Gate-Source Charge Q 41 gs V = 1000 V, V = -5 / +20 V DS GS Gate-Drain Charge Q I = 15 A 43 nC Fig. 10 gd D Per IEC607478-4 Total Gate Charge Q 130 g Internal Gate Resistance R f = 1 MHz, V = 25 mV 1.3 G(int) AC Turn-On Switching Energy EOn 437 (Body Diode) T = 25C, V = -5/+20V, R = 8 , L = j GS G(ext) J Fig. 22,26 220.0 H, I = 15 A, V = 1700 V Turn-Off Switching Energy D DD EOff 140 (Body Diode) Turn-On Delay Time t 82 d(on) V = 1700 V, V = -5/+20V DD GS Rise Time tr 28 RG(ext) = 8 , L = 220.0 H, ID = 15 A ns Fig. 24 Turn-Off Delay Time t 33 d(off) Timing relative to V , Inductive load DS Fall Time t 18 f *The chip technology was characterized up to 200 V/ns. The measured dV/dt was limited by measurement test setup and package. Note 2: C , a lumped capacitance that gives same stored energy as C while V is rising from 0 to 1000V. o(er) OSS DS C , a lumped capacitance that gives same charging times as C while V is rising from 0 to 1000V. o(tr) OSS DS Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G2R120MT33J/G2R120MT33J.pdf Page 2 of 14