X-On Electronics has gained recognition as a prominent supplier of G3R160MT12D SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. G3R160MT12D SiC MOSFETs are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

G3R160MT12D GeneSiC Semiconductor

G3R160MT12D electronic component of GeneSiC Semiconductor
G3R160MT12D GeneSiC Semiconductor
G3R160MT12D SiC MOSFETs
G3R160MT12D  Semiconductors

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See Product Specifications
Part No. G3R160MT12D
Manufacturer: GeneSiC Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V 160mohm TO-247-3 G3R SiC MOSFET
Datasheet: G3R160MT12D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.25 ea
Line Total: USD 7.25 
Availability - 2750
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2750
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 7.25
10 : USD 5.632
30 : USD 5.357
120 : USD 5.093
270 : USD 5.071
510 : USD 5.071
1020 : USD 5.071
2520 : USD 4.939
5010 : USD 4.785

830
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 8.638
3 : USD 7.798
7 : USD 7.378
30 : USD 7.126
120 : USD 7.084

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the G3R160MT12D from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G3R160MT12D and other electronic components in the SiC MOSFETs category and beyond.

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This is a SiC MOSFET (Silicon Carbide) manufactured by GeneSiC Semiconductor. It is a G3R160MT12D device, TO-247-3 package, with a rated voltage of 1200V, drain current of 160mO and an operating temperature of 25°C. It has a very high breakdown voltage and low on-resistance, which makes it ideal for high power applications such as motor drives and power switching. Additionally, it has a very low switching loss, making it suitable for use in high frequency switching, as well as high-temperature applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
GENESIC SEMICONDUCTOR INC.
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