TM G3R20MT17N 1700 V 20 m SiC MOSFET Silicon Carbide MOSFET VDS = 1700 V N-Channel Enhancement Mode DS(ON)(Typ.) R = 20 m ID (TC = 100C) = 60 A Features Package D G3R Technology with +15 V Gate Drive Softer RDS(ON) v/s Temperature Dependency LoRing - Electromagnetically Optimized Design G RoHS Smaller RG(INT) and Lower QG KS Low Device Capacitances (C , C ) OSS RSS S Industry-Leading UIL & Short-Circuit Robustness D = Drain Robust Body Diode with Low VF and Low QRR G = Gate SOT-227 Isolated Back-Side S = Source REACH KS = Kelvin Source Advantages Applications Compatible with Commercial Gate Drivers EV Fast Charging Low Conduction Losses at all Temperatures Solar Inverters Reduced Ringing Industrial Motor Drives Faster and More Efficient Switching Transportation Lesser Switching Spikes and Lower Losses Industrial Power Supply Superior Robustness and System Reliability Smart Grid and HVDC Ease of Paralleling without Thermal Runaway Induction Heating and Welding Better Power Density and System Efficiency Pulsed Power Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Drain-Source Voltage V V = 0 V, I = 100 A 1700 V DS(max) GS D Gate-Source Voltage (Dynamic) VGS(max) -10 / +20 V Gate-Source Voltage (Static) V Recommended Operation -5 / +15 V GS(op) T = 25C, V = -5 / +15 V 84 C GS Continuous Forward Current ID TC = 100C, VGS = -5 / +15 V 60 A Fig. 15 TC = 135C, VGS = -5 / +15 V 44 Pulsed Drain Current I t 3s, D 1%, V = 15 V, Note 1 250 A Fig. 14 D(pulse) P GS Power Dissipation P T = 25C 449 W Fig. 16 D c Non-Repetitive Avalanche Energy EAS L = 2.0 mH, IAS = 37.5 A 1410 mJ Operating and Storage Temperature T , T -55 to 175 C j stg Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.27 0.33 C/W Fig. 13 thJC Weight WT 28.0 g Mounting Torque T Screws to Heatsink 1.5 Nm M Terminal Connection Torque T M4 Screws 1.3 Nm C Note 1: Pulse Width tP Limited by Tj(max) Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G3R20MT17N/G3R20MT17N.pdf Page 1 of 14TM G3R20MT17N 1700 V 20 m SiC MOSFET Electrical Characteristics (At T = 25C Unless Otherwise Stated) C Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I = 100 A 1700 V DSS GS D Zero Gate Voltage Drain Current I V = 1700 V, V = 0 V 1 A DSS DS GS V = 0 V, V = 20 V 100 DS GS Gate Source Leakage Current IGSS nA V = 0 V, V = -10 V -100 DS GS VDS = VGS, ID = 60.0 mA 1.8 2.70 Gate Threshold Voltage V V Fig. 9 GS(th) VDS = VGS, ID = 60.0 mA, Tj = 175C 1.90 V = 10 V, I = 75 A 37.9 DS D Transconductance g S Fig. 4 fs V = 10 V, I = 75 A, T = 175C 39.0 DS D j V = 15 V, I = 75 A 20 28 GS D Drain-Source On-State Resistance R m Fig. 5-8 DS(ON) V = 15 V, I = 75 A, T = 175C 45 GS D j Input Capacitance Ciss 7620 Output Capacitance C 205 pF Fig. 11 oss Reverse Transfer Capacitance C 36.4 rss Coss Stored Energy Eoss 136 J Fig. 12 V = 1000 V, V = 0 V DS GS C Stored Charge Q 410 nC oss oss f = 1 MHz, VAC = 25mV Effective Output Capacitance (Energy Co(er) 272 Related) pF Note 2 Effective Output Capacitance (Time Co(tr) 410 Related) Gate-Source Charge Q 77 gs V = 1000 V, V = -5 / +15 V DS GS Gate-Drain Charge Q I = 75 A 90 nC Fig. 10 gd D Per IEC607478-4 Total Gate Charge Q 256 g Internal Gate Resistance R f = 1 MHz, V = 25 mV 1.8 G(int) AC Turn-On Switching Energy EOn 928 (Body Diode) T = 25C, V = -5/+15V, R = 0.5 , L j GS G(ext) J Fig. 22,26 = 32.0 H, I = 75 A, V = 1200 V Turn-Off Switching Energy D DD EOff 533 (Body Diode) Turn-On Delay Time t 62 d(on) V = 1200 V, V = -5/+15V DD GS Rise Time tr 34 RG(ext) = 0.5 , L = 32.0 H, ID = 75 A ns Fig. 24 Turn-Off Delay Time t 40 d(off) Timing relative to V , Inductive load DS Fall Time t 25 f *The chip technology was characterized up to 200 V/ns. The measured dV/dt was limited by measurement test setup and package. Note 2: C , a lumped capacitance that gives same stored energy as C while V is rising from 0 to 1000V. o(er) OSS DS C , a lumped capacitance that gives same charging times as C while V is rising from 0 to 1000V. o(tr) OSS DS Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G3R20MT17N/G3R20MT17N.pdf Page 2 of 14