TM G3R30MT12K 1200 V 30 m SiC MOSFET Silicon Carbide MOSFET VDS = 1200 V N-Channel Enhancement Mode DS(ON)(Typ.) R = 30 m ID (TC = 100C) = 50 A Features Package D G3R Technology with +15 V Gate Drive Softer RDS(ON) v/s Temperature Dependency LoRing - Electromagnetically Optimized Design G RoHS Smaller RG(INT) and Lower QG KS Low Device Capacitances (C , C ) OSS RSS S Superior Cost-Performance Index D = Drain Robust Body Diode with Low VF and Low QRR G = Gate TO-247-4 100% Avalanche (UIL) Tested S = Source REACH KS = Kelvin Source Advantages Applications Compatible with Commercial Gate Drivers Solar Inverters Low Conduction Losses at all Temperatures Motor Drives Reduced Ringing EV Charging Faster and More Efficient Switching High Voltage DC-DC Converters Lesser Switching Spikes and Lower Losses Switched Mode Power Supplies Better Power Density and System Efficiency UPS Ease of Paralleling without Thermal Runaway Smart Grid Transmission and Distribution Superior Robustness and System Reliability Induction Heating and Welding Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Drain-Source Voltage V V = 0 V, I = 100 A 1200 V DS(max) GS D Gate-Source Voltage (Dynamic) VGS(max) -10 / +20 V Gate-Source Voltage (Static) V Recommended Operation -5 / +15 V GS(op) T = 25C, V = -5 / +15 V 70 C GS Continuous Forward Current ID TC = 100C, VGS = -5 / +15 V 50 A Fig. 15 TC = 135C, VGS = -5 / +15 V 36 Pulsed Drain Current I t 3s, D 1%, V = 15 V, Note 1 200 A Fig. 14 D(pulse) P GS Power Dissipation P T = 25C 281 W Fig. 16 D c Non-Repetitive Avalanche Energy EAS L = 2.0 mH, IAS = 22.5 A 498 mJ Operating and Storage Temperature T , T -55 to 175 C j stg Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.42 0.53 C/W Fig. 13 thJC Weight WT 6.2 g Mounting Torque T Screws to Heatsink 1.1 Nm M Note 1: Pulse Width t Limited by T P j(max) Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G3R30MT12K/G3R30MT12K.pdf Page 1 of 14TM G3R30MT12K 1200 V 30 m SiC MOSFET Electrical Characteristics (At T = 25C Unless Otherwise Stated) C Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I = 100 A 1200 V DSS GS D Zero Gate Voltage Drain Current I V = 1200 V, V = 0 V 1 A DSS DS GS V = 0 V, V = 20 V 100 DS GS Gate Source Leakage Current IGSS nA V = 0 V, V = -10 V -100 DS GS VDS = VGS, ID = 24.0 mA 1.8 2.70 Gate Threshold Voltage V V Fig. 9 GS(th) VDS = VGS, ID = 24.0 mA, Tj = 175C 2.05 V = 10 V, I = 45 A 20.9 DS D Transconductance g S Fig. 4 fs V = 10 V, I = 45 A, T = 175C 23.6 DS D j V = 15 V, I = 45 A 30 39 GS D Drain-Source On-State Resistance R m Fig. 5-8 DS(ON) V = 15 V, I = 45 A, T = 175C 43 GS D j Input Capacitance Ciss 3863 Output Capacitance C 117 pF Fig. 11 oss Reverse Transfer Capacitance C 9.4 rss Coss Stored Energy Eoss 45 J Fig. 12 V = 800 V, V = 0 V DS GS C Stored Charge Q 170 nC oss oss f = 1 MHz, VAC = 25mV Effective Output Capacitance (Energy Co(er) 140 Related) pF Note 2 Effective Output Capacitance (Time Co(tr) 212 Related) Gate-Source Charge Q 43 gs V = 800 V, V = -5 / +15 V DS GS Gate-Drain Charge Q I = 45 A 51 nC Fig. 10 gd D Per IEC607478-4 Total Gate Charge Q 118 g Internal Gate Resistance R f = 1 MHz, V = 25 mV 1.2 G(int) AC Turn-On Switching Energy EOn 298 (Body Diode) T = 25C, V = -5/+15V, R = 3 , L = j GS G(ext) J Fig. 22,26 40.0 H, I = 45 A, V = 800 V Turn-Off Switching Energy D DD EOff 97 (Body Diode) Turn-On Delay Time t 36 d(on) V = 800 V, V = -5/+15V DD GS Rise Time tr 11 RG(ext) = 3 , L = 40.0 H, ID = 45 A ns Fig. 24 Turn-Off Delay Time t 20 d(off) Timing relative to V , Inductive load DS Fall Time t 8 f *The chip technology was characterized up to 200 V/ns. The measured dV/dt was limited by measurement test setup and package. Note 2: C , a lumped capacitance that gives same stored energy as C while V is rising from 0 to 800V. o(er) OSS DS C , a lumped capacitance that gives same charging times as C while V is rising from 0 to 800V. o(tr) OSS DS Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G3R30MT12K/G3R30MT12K.pdf Page 2 of 14