TM G3R350MT12J 1200 V 350 m SiC MOSFET Silicon Carbide MOSFET VDS = 1200 V N-Channel Enhancement Mode DS(ON)(Typ.) R = 350 m ID (TC = 100C) = 8 A Features Package D G3R Technology - +15 V / -5 V Gate Drive Superior QG x RDS(ON) Figure of Merit Low Capacitances and Low Gate Charge G RoHS Normally-O S table Operaon up to 175C ti KS Fast and Reliable Body Diode S High Avalanche and Short Circuit Ruggedness D = Drain Low Conducon Lti osses at High Temperatures G = Gate TO-263-7 Optimiz ed Package with Separate Driver Source Pin S = Source REACH KS = Kelvin Source Advantages Applications Increased Power Density for Compact System Auxiliary Power Supply High Frequency Switching Solar Inverters Reduced Losses for Higher System E ciency UPS Minimized Gate Ringing High Voltage DC-DC Converters Improved Thermal Capability Switched Mode Power Supplies Superior Cost-Performance Index Auxiliary Motor Drives Ease of Paralleing without Thermal Runaway High Frequency Converters Simple to Drive Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Drain-Source Voltage V V = 0 V, I = 100 A 1200 V DS(max) GS D Gate-Source Voltage (Dynamic) VGS(max) -10 / +20 V Gate-Source Voltage (Static) V Recommended Operation -5 / +15 V GS(op) T = 25C, V = -5 / +15 V 11 C GS Continuous Forward Current ID TC = 100C, VGS = -5 / +15 V 8 A Fig. 15 TC = 135C, VGS = -5 / +15 V 6 Pulsed Drain Current I t 10s, D 1%, Note 1 16 A Fig. 14 D(pulse) P Power Dissipation P T = 25C 75 W Fig. 16 D c Operating and Storage Temperature Tj , Tstg -55 to 175 C Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 1.71 2.0 C/W Fig. 13 thJC Weight W 1.45 g T Note 1: Pulse Width tP Limited by Tj(max) Aug. 20 Rev 2 www.genesicsemi.com/sic-mosfet/G3R350MT12J/G3R350MT12J.pdf Page 1 of 9TM G3R350MT12J 1200 V 350 m SiC MOSFET Electrical Characteristics (At T = 25C Unless Otherwise Stated) C Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I = 100 A 1200 V DSS GS D Zero Gate Voltage Drain Current I V = 1200 V, V = 0 V 1 A DSS DS GS VDS = 0 V, VGS = 20 V 100 Gate Source Leakage Current I nA GSS VDS = 0 V, VGS = -10 V -100 V = V , I = 2.0 mA 2.69 DS GS D Gate Threshold Voltage VGS(th) V Fig. 9 V = V , I = 2.0 mA, T = 175C 2.05 DS GS D j V = 10 V, I = 4 A 1.7 DS D Transconductance g S Fig. 4 fs VDS = 10 V, ID = 4 A, Tj = 175C 1.9 V = 15 V, I = 4 A 350 420 GS D Drain-Source On-State Resistance R m Fig. 5-8 DS(ON) V = 15 V, I = 4 A, T = 175C 482 GS D j Input Capacitance C 334 iss Output Capacitance Coss 12 pF Fig. 11 VDS = 800 V, VGS = 0 V Reverse Transfer Capacitance C 2.0 rss f = 1 MHz, V = 25mV AC C Stored Energy E 5 J Fig. 12 oss oss Coss Stored Charge Qoss 18 nC Gate-Source Charge Q 3 gs VDS = 800 V, VGS = -5 / +15 V Gate-Drain Charge Q I = 4 A 4 nC Fig. 10 gd D Per IEC607478-4 Total Gate Charge Q 12 g Internal Gate Resistance R f = 1 MHz, V = 25 mV 3.0 G(int) AC Reverse Diode Characteriscsti Values Parameter Symbol Conditions Unit Note Min. Typ. Max. V = -5 V, I = 2 A 4.8 GS SD Fig. Diode Forward Voltage VSD V 17-18 V = -5 V, I = 2 A, T = 175C 4.3 GS SD j Continuous Diode Forward Current IS VGS = -5 V, Tc = 100C 5 A Diode Pulse Current I V = -5 V, Note 1 20 A S(pulse) GS Aug. 20 Rev 2 www.genesicsemi.com/sic-mosfet/G3R350MT12J/G3R350MT12J.pdf Page 2 of 9