TM G3R60MT07D 750 V 60 m SiC MOSFET Silicon Carbide MOSFET VDS = 750 V N-Channel Enhancement Mode DS(ON)(Typ.) R = 60 m ID (TC = 100C) = 30 A Features Package D G3R Technology with +15 V Gate Drive Softer RDS(ON) v/s Temperature Dependency LoRing - Electromagnetically Optimized Design G RoHS Smaller RG(INT) and Lower QG Low Device Capacitances (C , C ) OSS RSS S Superior Cost-Performance Index D = Drain Robust Body Diode with Low VF and Low QRR G = Gate TO-247-3 100% Avalanche (UIL) Tested S = Source REACH Advantages Applications Compatible with Commercial Gate Drivers Solar (PV) Inverters Low Conduction Losses at all Temperatures Server & Telecom Power Supplies Reduced Ringing Uninterruptible Power Supplies (UPS) Faster and More Efficient Switching EV / HEV Charging Lesser Switching Spikes and Lower Losses DC-DC Converters Better Power Density and System Efficiency Switched Mode Power Supplies (SMPS) Ease of Paralleling without Thermal Runaway Energy Storage and Battery Charging Superior Robustness and System Reliability Class D Amplifiers Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Drain-Source Voltage V V = 0 V, I = 100 A 750 V DS(max) GS D Gate-Source Voltage (Dynamic) VGS(max) -10 / +20 V Gate-Source Voltage (Static) V Recommended Operation -5 / +15 V GS(op) T = 25C, V = -5 / +15 V 43 C GS Continuous Forward Current ID TC = 100C, VGS = -5 / +15 V 30 A Fig. 15 TC = 135C, VGS = -5 / +15 V 22 Pulsed Drain Current I t 3s, D 1%, V = 15 V, Note 1 100 A Fig. 14 D(pulse) P GS Power Dissipation P T = 25C 171 W Fig. 16 D c Non-Repetitive Avalanche Energy EAS L = 7.5 mH, IAS = 7.5 A 210 mJ Operating and Storage Temperature T , T -55 to 175 C j stg Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.68 0.88 C/W Fig. 13 thJC Weight WT 6.1 g Mounting Torque T Screws to Heatsink 1.1 Nm M Note 1: Pulse Width t Limited by T P j(max) Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G3R60MT07D/G3R60MT07D.pdf Page 1 of 14TM G3R60MT07D 750 V 60 m SiC MOSFET Electrical Characteristics (At T = 25C Unless Otherwise Stated) C Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I = 100 A 750 V DSS GS D Zero Gate Voltage Drain Current I V = 750 V, V = 0 V 1 A DSS DS GS V = 0 V, V = 20 V 100 DS GS Gate Source Leakage Current IGSS nA V = 0 V, V = -10 V -100 DS GS VDS = VGS, ID = 8.0 mA 1.8 2.50 Gate Threshold Voltage V V Fig. 9 GS(th) VDS = VGS, ID = 8.0 mA, Tj = 175C 2.00 V = 10 V, I = 15 A 7.8 DS D Transconductance g S Fig. 4 fs V = 10 V, I = 15 A, T = 175C 8.6 DS D j V = 15 V, I = 15 A 60 78 GS D Drain-Source On-State Resistance R m Fig. 5-8 DS(ON) V = 15 V, I = 15 A, T = 175C 72 GS D j Input Capacitance Ciss 953 Output Capacitance C 90 pF Fig. 11 oss Reverse Transfer Capacitance C 7.9 rss Coss Stored Energy Eoss 10 J Fig. 12 V = 450 V, V = 0 V DS GS C Stored Charge Q 59 nC oss oss f = 1 MHz, VAC = 25mV Effective Output Capacitance (Energy Co(er) 98 Related) pF Note 2 Effective Output Capacitance (Time Co(tr) 131 Related) Gate-Source Charge Q 13 gs V = 450 V, V = -5 / +15 V DS GS Gate-Drain Charge Q I = 15 A 16 nC Fig. 10 gd D Per IEC607478-4 Total Gate Charge Q 47 g Internal Gate Resistance R f = 1 MHz, V = 25 mV 1.0 G(int) AC Turn-On Switching Energy EOn 84 (Body Diode) T = 25C, V = -5/+15V, R = 3 , L = j GS G(ext) J Fig. 22,26 60.0 H, I = 15 A, V = 450 V Turn-Off Switching Energy D DD EOff 15 (Body Diode) Turn-On Delay Time t 20 d(on) V = 450 V, V = -5/+15V DD GS Rise Time tr 7 RG(ext) = 3 , L = 60.0 H, ID = 15 A ns Fig. 24 Turn-Off Delay Time t 8 d(off) Timing relative to V , Inductive load DS Fall Time t 5 f *The chip technology was characterized up to 200 V/ns. The measured dV/dt was limited by measurement test setup and package. Note 2: C , a lumped capacitance that gives same stored energy as C while V is rising from 0 to 450V. o(er) OSS DS C , a lumped capacitance that gives same charging times as C while V is rising from 0 to 450V. o(tr) OSS DS Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G3R60MT07D/G3R60MT07D.pdf Page 2 of 14