GA01PNS150-201 GeneSiC Semiconductor

GA01PNS150-201 Silicon Carbide PiN Diode V = 15.0 kV RRM I = 1 A F (Tc=25C) Features Package 15 kV blocking 175 C operating temperature 1 Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching PIN 1 2 PIN 2 DO-201 Advantages Applications Highest voltage rectifier commercially available Voltage Multiplier Reduced stacking Ignition/Trigger Circuits Reduced system complexity/Increased reliability Oil/Downhole Lighting Defense Maximum Ratings at T = 175 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 15 kV RRM Continuous forward current I 1 A F RMS forward current I 0.5 A F(RMS) Operating and storage temperature T , T -55 to 175 C j stg Electrical Characteristics at T = 175 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 1 A, T = 25 C 6.4 F j Diode forward voltage V V F I = 1 A, T = 175 C 4.7 F j V = 8 kV, T = 25 C 1 20 R j Reverse current I A R V = 8 kV, T = 175 C 100 R j V = 1000 V R Total reverse recovery charge Q I I 558 nC rr F F,MAX I = 1.5 A F dI /dt = 70 A/s F V = 1000 V R T = 175 C Switching time t j < 236 ns s I = 1.5 A F V = 1 V, f = 1 MHz, T = 25 C 22 R j V = 400 V, f = 1 MHz, T = 25 C Total capacitance C R j 4 pF V = 1000 V, f = 1 MHz, T = 25 C R j 3 Total capacitive charge Q V = 1000 V, f = 1 MHz, T = 25 C 4.5 nC C R j Nov 2016 Latest version at: GA01PNS150-201 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics at 25C Figure 3: Typical Junction Capacitance vs Reverse Voltage Figure 4: Typical Turn Off Characteristics at I = 0.5 A and k Characteristics V = 1000 V R Figure 5: Typical Turn Off Characteristics at T = 175C and j Figure 6: Reverse Recovery Charge vs Cathode Current V = 1000 V R Nov 2016 Latest version at: