512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 GLS27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories Data Sheet FEATURES: Organized as 64K x8 / 128K x8 / 256K x8 Fast Byte-Program Operation 4.5-5.5V Read Operation Byte-Program Time: 20 s (typical) Chip Program Time: Superior Reliability 1.4 seconds (typical) for GLS27SF512 Endurance: At least 1000 Cycles 2.8 seconds (typical) for GLS27SF010 Greater than 100 years Data Retention 5.6 seconds (typical) for GLS27SF020 Low Power Consumption Electrical Erase Using Programmer Active Current: 20 mA (typical) Does not require UV source Standby Current: 10 A (typical) Chip-Erase Time: 100 ms (typical) Fast Read Access Time TTL I/O Compatibility 70 ns JEDEC Standard Byte-wide EPROM Pinouts Packages Available 32-lead PLCC 32-lead TSOP (8mm x 14mm) 32-pin PDIP for GLS27SF010/020 All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The GLS27SF512/010/020 are a 64K x8 / 128K x8 / 256K To meet surface mount and conventional through hole x8 CMOS, Many-Time Programmable (MTP) low cost requirements, the GLS27SF512 are offered in 32-lead flash, manufactured with high performance SuperFlash PLCC, 32-lead TSOP, and 28-pin PDIP packages. The technology. The split-gate cell design and thick oxide tun- GLS27SF010/020 are offered in 32-pin PDIP, 32-lead neling injector attain better reliability and manufacturability PLCC, and 32-lead TSOP packages. See Figures 3, 4, compared with alternate approaches. These MTP devices and 5 for pin assignments. can be electrically erased and programmed at least 1000 times using an external programmer with a 12V power sup- Device Operation ply. They have to be erased prior to programming. These The GLS27SF512/010/020 are a low cost flash solution devices conform to JEDEC standard pinouts for byte-wide that can be used to replace existing UV-EPROM, OTP, memories. and mask ROM sockets. These devices are functionally Featuring high-performance Byte-Program, the (read and program) and pin compatible with industry GLS27SF512/010/020 provide a Byte-Program time of 20 standard EPROM products. In addition to EPROM func- s. Designed, manufactured, and tested for a wide spec- tionality, these devices also support electrical Erase trum of applications, these devices are offered with an operation via an external programmer. They do not endurance of at least 1000 cycles. Data retention is rated at require a UV source to erase, and therefore the pack- greater than 100 years. ages do not have a window. The GLS27SF512/010/020 are suited for applications that Read require infrequent writes and low power nonvolatile stor- age. These devices will improve flexibility, efficiency, and The Read operation of the GLS27SF512/010/020 is con- performance while matching the low cost in nonvolatile trolled by CE and OE . Both CE and OE have to be applications that currently use UV-EPROMs, OTPs, and low for the system to obtain data from the outputs. Once mask ROMs. the address is stable, the address access time is equal to the delay from CE to output (T ). Data is available at the CE output after a delay of T from the falling edge of OE , OE assuming that CE pin has been low and the addresses 2010 Greenliant Systems, Ltd. www.greenliant.com S71152-13-000 05/10512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet have been stable for at least T -T When the CE pin is CE OE. Product Identification Mode high, the chip is deselected and a typical standby current of The Product Identification mode identifies the devices as 10 A is consumed. OE is the output control and is used the GLS27SF512, GLS27SF010 and GLS27SF020 and to gate data from the output pins. The data bus is in high manufacturer as Greenliant. This mode may be accessed impedance state when either CE or OE is high. by the hardware method. To activate this mode for GLS27SF010/020, the programming equipment must force Byte-Program Operation V (11.4-12V) on address A with V pin at V (4.5-5.5V) H 9 PP DD or V . To activate this mode for GLS27SF512, the pro- The GLS27SF512/010/020 are programmed by using an SS gramming equipment must force V (11.4-12V) on address external programmer. The programming mode for H A with OE /V pin at V . Two identifier bytes may then GLS27SF010/020 is activated by asserting 11.4-12V on 9 PP IL be sequenced from the device outputs by toggling address V pin, V = 4.5-5.5V, V on CE pin, and V on OE PP DD IL IH line A . For details, see Tables 3 and 4 for hardware opera- pin. The programming mode for GLS27SF512 is activated 0 tion. by asserting 11.4-12V on OE /V pin, V = 4.5-5.5V, PP DD and V on CE pin. These devices are programmed byte- IL by-byte with the desired data at the desired address using TABLE 1: Product Identification a single pulse (CE pin low for GLS27SF512 and PGM Address Data pin low for GLS27SF010/020) of 20 s. Using the MTP Manufacturers ID 0000H BFH programming algorithm, the Byte-Programming process Device ID continues byte-by-byte until the entire chip has been pro- GLS27SF512 0001H A4H grammed. GLS27SF010 0001H A5H GLS27SF020 0001H A6H Chip-Erase Operation T1.2 1152 The only way to change a data from a 0 to 1 is by electri- cal erase that changes every bit in the device to 1. Unlike traditional EPROMs, which use UV light to do the Chip- Erase, the GLS27SF512/010/020 uses an electrical Chip- Erase operation. This saves a significant amount of time (about 30 minutes for each Erase operation). The entire chip can be erased in a single pulse of 100 ms (CE pin low for GLS27SF512 and PGM pin for GLS27SF010/ 020). In order to activate the Erase mode for GLS27SF010/020, the 11.4-12V is applied to V and A PP 9 pins, V = 4.5-5.5V, V on CE pin, and V on OE pin. DD IL IH In order to activate Erase mode for GLS27SF512, the 11.4- 12V is applied to OE /V and A pins, V = 4.5-5.5V, PP 9 DD and V on CE pin. All other address and data pins are IL dont care. The falling edge of CE (PGM for GLS27SF010/020) will start the Chip-Erase operation. Once the chip has been erased, all bytes must be verified for FFH. Refer to Figures 13 and 14 for the flowcharts. 2010 Greenliant Systems, Ltd. S71152-13-000 05/10 2