Product Information

GS74108AGP-8I

GS74108AGP-8I electronic component of GSI Technology

Datasheet
SRAM 3.3V 512K x 8 4M I Temp

Manufacturer: GSI Technology
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

135: USD 6.767 ea
Line Total: USD 913.54

0 - Global Stock
MOQ: 135  Multiples: 135
Pack Size: 135
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 135
Multiples : 135

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GS74108AGP-8I
GSI Technology

135 : USD 6.767

     
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GS74108AGP/X 8, 10, 12 ns TSOP, FP-BGA 512K x 8 3.3 V V DD Commercial Temp 4Mb Asynchronous SRAM Center V and V Industrial Temp DD SS Features FP-BGA 512K x 8 Bump Configuration (Package X) Fast access time: 8, 10, 12 ns 1 2 3 4 5 6 CMOS low power operation: 120/95/85 mA at minimum cycle time Single 3.3 V power supply OE A2 A6 A7 NC A NC All inputs and outputs are TTL-compatible Fully static operation B DQ1 NC A1 A5 CE DQ8 Industrial Temperature Option: 40 to 85C Package line up C DQ2 NC A0 A4 NC DQ7 GP: RoHS-compliant 400 mil, 44-pin TSOP-II package D VSS NC A18 A3 NC VDD X: 6 mm x 10 mm FPBGA package GX: RoHS-compliant 6 mm x 10 mm FPBGA package E VDD NC A17 A9 NC VSS Description F DQ3 NC A13 A10 NC DQ6 The GS74108A is a high speed CMOS Static RAM organized G DQ4 NC A14 A11 WE DQ5 as 524,288 words by 8 bits. Static design eliminates the need for external clocks or timing strobes. The GS74108A operates H NC A16 A15 A12 A8 NC on a single 3.3 V power supply and all inputs and outputs are TTL-compatible. The GS74108A is available in 400 mil TSOP-II and 6 mm x 10 mm FPBGA packages. 6 mm x 10 mm TSOP-II 512K x 8-Pin Configuration NC 1 44 NC Pin Descriptions 2 43 NC NC 42 A4 3 NC Symbol Description 41 4 A3 A5 A0A18 Address input 40 5 A2 A6 6 39 DQ1DQ8 Data input/output A1 A7 38 7 A0 A8 CE Chip enable input 37 CE 8 OE WE Write enable input 9 36 DQ1 DQ8 35 DQ2 10 DQ7 OE Output enable input 44-pin 11 34 V V DD SS V +3.3 V power supply DD 33 12 V V 400 mil TSOP II SS DD 32 DQ3 13 DQ6 V Ground SS DQ4 14 31 DQ5 NC No connect 30 WE 15 A9 A17 16 29 A10 A16 A11 17 28 A15 18 27 A12 A14 26 A18 19 A13 25 NC 20 NC 21 24 NC NC 22 23 NC Rev: 1.09 1/2013 1/11 2001, GSI Technology, Inc. Specifications cited are subject to change without notice. For latest documentation see GS74108AGP/X Block Diagram A0 Row Memory Array Decoder Address Input Buffer Column A18 Decoder CE WE I/O Buffer Control OE DQ8 DQ1 Truth Table V Current CE OE WE DQ1 to DQ8 DD H X X Not Selected ISB1, ISB2 L L H Read L X L Write IDD L H H High Z Note: X: H or L Rev: 1.09 1/2013 2/11 2001, GSI Technology, Inc. Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

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