GS74117AGX-12I GSI Technology

GS74117AX 8, 10, 12 ns FP-BGA 256K x 16 3.3 V V DD Commercial Temp Center V and V DD SS 4Mb Asynchronous SRAM Industrial Temp Features Fine Pitch BGA 256K x 16 Bump Configuration Fast access time: 8, 10, 12 ns 1 2 3 4 5 6 CMOS low power operation: 130/105/95 mA at minimum cycle time Single 3.3 V power supply LB OE A0 A1 A2 NC A All inputs and outputs are TTL-compatible Byte control B DQ1 UB A3 A4 CE DQ16 Fully static operation Industrial Temperature Option: 40 to 85C C DQ3 DQ2 A5 A6 DQ15 DQ14 Package: D VSS DQ4 A17 A7 DQ13 VDD X: 6 mm x 10 mm Fine Pitch Ball Grid Array package GX: Pb-Free 6 mm x 10 mm Fine Pitch Ball Grid Array E VDD DQ5 NC A16 DQ12 VSS package F DQ6 DQ7 A8 A9 DQ10 DQ11 Description G DQ8 NC A10 A11 WE DQ9 The GS74117A is a high speed CMOS Static RAM organized as 262,144 words by 16 bits. Static design eliminates the need H NC A12 A13 A14 A15 NC for external clocks or timing strobes. The GS operates on a single 3.3 V power supply and all inputs and outputs are TTL- compatible. The GS74117A is available in a 6 x 10 mm Fine Package X Pitch BGA package. 6 x 10 mm Substrate Top View Pin Descriptions Symbol Description A0A17 Address input DQ1DQ16 Data input/output CE Chip enable input Lower byte enable input LB (DQ1 to DQ8) Upper byte enable input UB (DQ9 to DQ16) WE Write enable input OE Output enable input V +3.3 V power supply DD V Ground SS NC No connect Rev: 1.05b 6/2010 1/12 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS74117AX Block Diagram A0 Row Memory Array Decoder Address Input Buffer Column Decoder A17 CE WE I/O Buffer Control OE _____ UB DQ1 DQ16 Truth Table CE OE WE LB UB DQ1 to DQ8 DQ9 to DQ16 VDD Current H X X X X Not Selected Not Selected ISB1, ISB2 L L Read Read L L H L H Read High Z H L High Z Read L L Write Write IDD L X L L H Write Not Write, High Z H L Not Write, High Z Write L H H X X High Z High Z L X X H H High Z High Z X: H or L Rev: 1.05b 6/2010 2/12 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see