X-On Electronics has gained recognition as a prominent supplier of GS81302D36GE-250 SRAM across the USA, India, Europe, Australia, and various other global locations. GS81302D36GE-250 SRAM are a product manufactured by GSI Technology. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

GS81302D36GE-250 GSI Technology

GS81302D36GE-250 electronic component of GSI Technology
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Part No.GS81302D36GE-250
Manufacturer: GSI Technology
Category: SRAM
Description: SRAM 1.8 or 1.5V 4M x 36 144M
Datasheet: GS81302D36GE-250 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 185.8248 ea
Line Total: USD 1858.25 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 10
Multiples : 10
10 : USD 185.8248
20 : USD 185.3363
50 : USD 180.3351
100 : USD 172.9844

   
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We are delighted to provide the GS81302D36GE-250 from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS81302D36GE-250 and other electronic components in the SRAM category and beyond.

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GS81302D08/09/18/36E-375/350/333/300/250 375 MHz250 MHz TM 165-Bump BGA 144Mb SigmaQuad -II 1.8 V V DD Commercial Temp Burst of 4 SRAM 1.8 V and 1.5 V I/O Industrial Temp Features Clocking and Addressing Schemes Simultaneous Read and Write SigmaQuad Interface The GS81302D08/09/18/36E SigmaQuad-II SRAMs are JEDEC-standard pinout and package synchronous devices. They employ two input register clock Dual Double Data Rate interface inputs, K and K. K and K are independent single-ended clock Byte Write controls sampled at data-in time inputs, not differential inputs to a single differential clock input Burst of 4 Read and Write buffer. The device also allows the user to manipulate the 1.8 V +100/100 mV core power supply output register clock inputs quasi independently with the C and 1.5 V or 1.8 V HSTL Interface C clock inputs. C and C are also independent single-ended Pipelined read operation clock inputs, not differential inputs. If the C clocks are tied Fully coherent read and write pipelines high, the K clocks are routed internally to fire the output ZQ pin for programmable output drive strength registers instead. IEEE 1149.1 JTAG-compliant Boundary Scan Pin-compatible with present 144 Mb devices Each internal read and write operation in a SigmaQuad-II B4 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package RAM is four times wider than the device I/O bus. An input RoHS-compliant 165-bump BGA package available data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output data multiplexer is used to capture the data produced SigmaQuad Family Overview from a single memory array read and then route it to the The GS81302D08/09/18/36E are built in compliance with the appropriate output drivers as needed. Therefore the address SigmaQuad-II SRAM pinout standard for Separate I/O field of a SigmaQuad-II B4 RAM is always two address pins synchronous SRAMs. They are 150,994,944-bit (144Mb) less than the advertised index depth (e.g., the 16M x 8 has a SRAMs. The GS81302D08/09/18/36E SigmaQuad SRAMs 4M addressable index). are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems. Parameter Synopsis -375 -350 -333 -300 -250 tKHKH 2.66 ns 2.86 ns 3.0 ns 3.3 ns 4.0 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.04c 8/2017 1/34 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS81302D08/09/18/36E-375/350/333/300/250 4M x 36 SigmaQuad-II SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 NA/SA A CQ SA W BW2 K BW1 R SA SA CQ (288Mb) B Q27 Q18 D18 SA BW3 K BW0 SA D17 Q17 Q8 C D27 Q28 D19 V SA NC SA V D16 Q7 D8 SS SS D D28 D20 Q19 V V V V V Q16 D15 D7 SS SS SS SS SS E Q29 D29 Q20 V V V V V Q15 D6 Q6 DDQ SS SS SS DDQ F Q30 Q21 D21 V V V V V D14 Q14 Q5 DDQ DD SS DD DDQ G D30 D22 Q22 V V V V V Q13 D13 D5 DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J D31 Q31 D23 V V V V V D12 Q4 D4 DDQ DD SS DD DDQ K Q32 D32 Q23 V V V V V Q12 D3 Q3 DDQ DD SS DD DDQ L Q33 Q24 D24 V V V V V D11 Q11 Q2 DDQ SS SS SS DDQ M D33 Q34 D25 V V V V V D10 Q1 D2 SS SS SS SS SS N D34 D26 Q25 V SA SA SA V Q10 D9 D1 SS SS P Q35 D35 Q26 SA SA C SA SA Q9 D0 Q0 R TDO TCK SA SA SA C SA SA SA TMS TDI 2 11 x 15 Bump BGA15 x 17 mm Body1 mm Bump Pitch Notes: 1. BW0 controls writes to D0:D8; BW1 controls writes to D9:D17; BW2 controls writes to D18:D26; BW3 controls writes to D27:D35. 2. A2 is the expansion address. Rev: 1.04c 8/2017 2/34 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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