GS81302TT07/10/19/37E-450/400/350/333/300 TM 450 MHz300 MHz 165-Bump BGA 144Mb SigmaDDR -II+ 1.8 V V Commercial Temp DD Burst of 2 SRAM Industrial Temp 1.8 V or 1.5 V I/O SRAMs. The GS81302TT07/10/19/37E SigmaDDR-II+ Features SRAMs are just one element in a family of low power, low 2.0 Clock Latency voltage HSTL I/O SRAMs designed to operate at the speeds Simultaneous Read and Write SigmaDDR Interface needed to implement economical high performance Common I/O bus networking systems. JEDEC-standard pinout and package Double Data Rate interface Byte Write controls sampled at data-in time Clocking and Addressing Schemes Burst of 2 Read and Write Dual-Range On-Die Termination (ODT) on Data (D), Byte The GS81302TT07/10/19/37E SigmaDDR-II+ SRAMs are Write (BW), and Clock (K, K) inputs synchronous devices. They employ two input register clock 1.8 V +100/100 mV core power supply inputs, K and K. K and K are independent single-ended clock 1.5 V or 1.8 V HSTL Interface inputs, not differential inputs to a single differential clock input Pipelined read operation with self-timed Late Write buffer. Fully coherent read and write pipelines ZQ pin for programmable output drive strength Each internal read and write operation in a SigmaDDR-II+ B2 Data Valid pin (QVLD) Support RAM is two times wider than the device I/O bus. An input data IEEE 1149.1 JTAG-compliant Boundary Scan bus de-multiplexer is used to accumulate incoming data before 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package it is simultaneously written to the memory array. An output RoHS-compliant 165-bump BGA package available data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed. Therefore, the address field of a SigmaDDR Family Overview SigmaDDR-II+ B2 RAM is always one address pin less than The GS81302TT07/10/19/37E are built in compliance with the the advertised index depth (e.g., the 16M x 8 has an 8M SigmaDDR-II+ SRAM pinout standard for Common I/O addressable index). synchronous SRAMs. They are 150,994,944-bit (144Mb) Parameter Synopsis -450 -400 -350 -333 -300 tKHKH 2.2 ns 2.5 ns 2.86 ns 3.0 ns 3.3 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.00b 8/2017 1/30 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS81302TT07/10/19/37E-450/400/350/333/300 16M x 8 SigmaDDR-II+ SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 A CQ SA SA R/W NW1 K SA LD SA SA CQ NC/SA B NC NC NC SA K NW0 SA NC NC DQ3 (288Mb) C NC NC NC V SA SA SA V NC NC NC SS SS D NC NC NC V V V V V NC NC NC SS SS SS SS SS E NC NC DQ4 V V V V V NC NC DQ2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ G NC NC DQ5 V V V V V NC NC NC DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J NC NC NC V V V V V NC DQ1 NC DDQ DD SS DD DDQ K NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ L NC DQ6 NC V V V V V NC NC DQ0 DDQ SS SS SS DDQ M NC NC NC V V V V V NC NC NC SS SS SS SS SS N NC NC NC V SA SA SA V NC NC NC SS SS P NC NC DQ7 SA SA QVLD SA SA NC NC NC R TDO TCK SA SA SA ODT SA SA SA TMS TDI 2 11 x 15 Bump BGA15 x 17 mm Body1 mm Bump Pitch Notes: 1. NW0 controls writes to DQ0:DQ3 NW1 controls writes to DQ4:DQ7. 2. Pin B5 is the expansion address. Rev: 1.00b 8/2017 2/30 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see