GS82582Q18/36GE-357/333/300/250 357 MHz250 MHz 165-Bump BGA TM 288Mb SigmaQuad-II 1.8 V V DD Commercial Temp 1.8 V and 1.5 V I/O Industrial Temp Burst of 2 SRAM Features Clocking and Addressing Schemes Simultaneous Read and Write SigmaQuad Interface The GS82582Q18/36GE SigmaQuad-II SRAMs are JEDEC-standard pinout and package synchronous devices. They employ two input register clock Dual Double Data Rate interface inputs, K and K. K and K are independent single-ended clock Byte Write controls sampled at data-in time inputs, not differential inputs to a single differential clock input Burst of 2 Read and Write buffer. The device also allows the user to manipulate the 1.8 V +100/100 mV core power supply output register clock inputs quasi independently with the C and 1.5 V or 1.8 V HSTL Interface C clock inputs. C and C are also independent single-ended Pipelined read operation clock inputs, not differential inputs. If the C clocks are tied Fully coherent read and write pipelines high, the K clocks are routed internally to fire the output ZQ pin for programmable output drive strength registers instead. IEEE 1149.1 JTAG-compliant Boundary Scan Pin-compatible with present 144 Mb devices Each internal read and write operation in a SigmaQuad-II B2 RoHS-compliant 165-bump BGA package RAM is two times wider than the device I/O bus. An input data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output SigmaQuad Family Overview data multiplexer is used to capture the data produced from a The GS82582Q18/36GE are built in compliance with the single memory array read and then route it to the appropriate SigmaQuad-II SRAM pinout standard for Separate I/O output drivers as needed. Therefore the address field of a synchronous SRAMs. They are 301,989,888-bit (288Mb) SigmaQuad-II B2 RAM is always one address pin less than the SRAMs. The GS82582Q18/36GE SigmaQuad SRAMs are just advertised index depth (e.g., the 16M x 18 has an 8M one element in a family of low power, low voltage HSTL I/O addressable index). SRAMs designed to operate at the speeds needed to implement economical high performance networking systems. Parameter Synopsis -357 -333 -300 -250 tKHKH 2.86 ns 3.0 ns 3.3 ns 4.0 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.04 4/2016 1/31 2012, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS82582Q18/36GE-357/333/300/250 8M x 36 SigmaQuad-II SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 A CQ SA SA W BW2 K BW1 R SA SA CQ B Q27 Q18 D18 SA BW3 K BW0 SA D17 Q17 Q8 C D27 Q28 D19 V SA SA SA V D16 Q7 D8 SS SS D D28 D20 Q19 V V V V V Q16 D15 D7 SS SS SS SS SS E Q29 D29 Q20 V V V V V Q15 D6 Q6 DDQ SS SS SS DDQ F Q30 Q21 D21 V V V V V D14 Q14 Q5 DDQ DD SS DD DDQ G D30 D22 Q22 V V V V V Q13 D13 D5 DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J D31 Q31 D23 V V V V V D12 Q4 D4 DDQ DD SS DD DDQ K Q32 D32 Q23 V V V V V Q12 D3 Q3 DDQ DD SS DD DDQ L Q33 Q24 D24 V V V V V D11 Q11 Q2 DDQ SS SS SS DDQ M D33 Q34 D25 V V V V V D10 Q1 D2 SS SS SS SS SS N D34 D26 Q25 V SA SA SA V Q10 D9 D1 SS SS P Q35 D35 Q26 SA SA C SA SA Q9 D0 Q0 R TDO TCK SA SA SA C SA SA SA TMS TDI 2 11 x 15 Bump BGA15 x 17 mm Body1 mm Bump Pitch Note: BW0 controls writes to D0:D8 BW1 controls writes to D9:D17 BW2 controls writes to D18:D26 BW3 controls writes to D27:D35. Rev: 1.04 4/2016 2/31 2012, GSI Technology Specifications cited are subject to change without notice. For latest documentation see