X-On Electronics has gained recognition as a prominent supplier of GS82582QT37GE-400I SRAM across the USA, India, Europe, Australia, and various other global locations. GS82582QT37GE-400I SRAM are a product manufactured by GSI Technology. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

GS82582QT37GE-400I GSI Technology

GS82582QT37GE-400I electronic component of GSI Technology
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Part No.GS82582QT37GE-400I
Manufacturer: GSI Technology
Category: SRAM
Description: SRAM 1.5/1.8V 8M x 36 288M
Datasheet: GS82582QT37GE-400I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 487.0052 ea
Line Total: USD 4870.05 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 10
Multiples : 10
10 : USD 487.0052

   
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We are delighted to provide the GS82582QT37GE-400I from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS82582QT37GE-400I and other electronic components in the SRAM category and beyond.

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GS82582QT19/37GE-400/375/333/300 400 MHz300 MHz 165-Bump BGA TM 288Mb SigmaQuad-II+ 1.8 V V Commercial Temp DD Industrial Temp Burst of 2 SRAM 1.8 V and 1.5 V I/O just one element in a family of low power, low voltage HSTL Features I/O SRAMs designed to operate at the speeds needed to 2.0 clock Latency implement economical high performance networking systems. Simultaneous Read and Write SigmaQuad Interface JEDEC-standard pinout and package Clocking and Addressing Schemes Dual Double Data Rate interface Byte Write controls sampled at data-in time The GS82582QT19/37GE SigmaQuad-II+ SRAMs are Dual-Range On-Die Termination (ODT) on Data (D), Byte synchronous devices. They employ two input register clock Write (BW), and Clock (K, K) inputs inputs, K and K. K and K are independent single-ended clock Burst of 2 Read and Write inputs, not differential inputs to a single differential clock input 1.8 V +100/100 mV core power supply buffer. 1.5 V or 1.8 V HSTL Interface Pipelined read operation Each internal read and write operation in a SigmaQuad-II+ B2 Fully coherent read and write pipelines RAM is two times wider than the device I/O bus. An input data ZQ pin for programmable output drive strength bus de-multiplexer is used to accumulate incoming data before Data Valid Pin (QVLD) Support it is simultaneously written to the memory array. An output IEEE 1149.1 JTAG-compliant Boundary Scan data multiplexer is used to capture the data produced from a RoHS-compliant 165-bump BGA package available single memory array read and then route it to the appropriate output drivers as needed. Therefore the address field of a SigmaQuad-II+ B2 RAM is always one address pin less than SigmaQuad Family Overview the advertised index depth (e.g., the 16M x 18 has an 8M The GS82582QT19/37GE are built in compliance with the addressable index). SigmaQuad-II+ SRAM pinout standard for Separate I/O synchronous SRAMs. They are 301,989,888-bit (288Mb) SRAMs. The GS82582QT19/37GE SigmaQuad SRAMs are Parameter Synopsis -400 -375 -333 -300 tKHKH 2.5 ns 3.3 ns 4.0 ns 5.0 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.04a 11/2017 1/25 2012, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS82582QT19/37GE-400/375/333/300 16M x 18 SigmaQuad-II+ SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 A CQ SA SA W BW1 K SA R SA SA CQ B NC Q9 D9 SA NC K BW0 SA NC NC Q8 C NC NC D10 V SA SA SA V NC Q7 D8 SS SS D NC D11 Q10 V V V V V NC NC D7 SS SS SS SS SS E NC NC Q11 V V V V V NC D6 Q6 DDQ SS SS SS DDQ F NC Q12 D12 V V V V V NC NC Q5 DDQ DD SS DD DDQ G NC D13 Q13 V V V V V NC NC D5 DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J NC NC D14 V V V V V NC Q4 D4 DDQ DD SS DD DDQ K NC NC Q14 V V V V V NC D3 Q3 DDQ DD SS DD DDQ L NC Q15 D15 V V V V V NC NC Q2 DDQ SS SS SS DDQ M NC NC D16 V V V V V NC Q1 D2 SS SS SS SS SS N NC D17 Q16 V SA SA SA V NC NC D1 SS SS P NC NC Q17 SA SA QVLD SA SA NC D0 Q0 R TDO TCK SA SA SA ODT SA SA SA TMS TDI 11 x 15 Bump BGA15 x 17 mm Body1 mm Bump Pitch Note: BW0 controls writes to D0:D8. BW1 controls writes to D9:D17. Rev: 1.04a 11/2017 2/25 2012, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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